激光与光电子学进展, 2005, 42 (12): 50, 网络出版: 2006-06-01
808nm准连续半导体激光器及其阵列的研究
Study on 808nm QCW Semiconductor Laser and its Bars
摘要
介绍了808nm准连续半导体激光器及其阵列的腔面镀膜技术,影响激光器波长的因素,封装技术以及输出光的光纤耦合方式。给出了808nm准连续半导体激光器及其阵列现状和发展趋势。
Abstract
The article introduces the technology of plating film on the 808 nm QCW(quasi-continuous wave) semiconductor lasers and their bars, and the factors that can influence the wavelength, encapsulation and the fiber coupling ways of the output light, and presents the current status and the future development trends.
唐婷婷, 王锐, 廖柯. 808nm准连续半导体激光器及其阵列的研究[J]. 激光与光电子学进展, 2005, 42(12): 50. 唐婷婷, 王锐, 廖柯. Study on 808nm QCW Semiconductor Laser and its Bars[J]. Laser & Optoelectronics Progress, 2005, 42(12): 50.
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