应用坩埚下降法技术,以同成份化学摩尔分数[x(Li2O)=48.6%,x(Nb2O5)=51.4%]为原料,生长出了以不同Zn,Eu双掺杂的LiNbO3晶体。测定了晶体下部与上部的X射线衍射图(XRD)、激发光谱、荧光光谱以及声子边带谱。Zn的掺杂量对Eu3+离子在晶体中的分布产生很大的影响。Zn掺杂摩尔分数为3%时,Eu3+离子在进入晶格时受到有效的压制。随着Zn掺杂摩尔分数提高,达到6%时,压制作用减弱。从Zn2+离子在LiNbO3中随浓度变化的分凝情况以及对Eu3+离子的排斥作用解释了Eu3+离子分布的原因。同时测定了Zn掺杂样品的声子边带谱。

The growth of LiNbO3 crystals co-doped with Zn2+, Eu3+ ions with different concentrations by Bridgman method was obtained by means of the feed materials with proper composition mole fraction [x(Li2O)=48.6%, x(Nb2O5)=51.4%]. The X-ray diffraction (XRD), excitation, emission and phonon side band spectra of the upper and lower parts of crystals were measured. The doping content of ZnO takes great effects on the distributing concentration of Eu3+ ion LiNbO3 crystal. When 3% of ZnO in mole fraction is doped, the Eu3+ ions are suppressed effectively to enter LiNbO3 crystal lattice, but in 6% mole fraction, the effect becomes weaker. The reasons for the concentration changes of Eu3+ ions can be interpreted by the suppressing effect of ZnO on the incorporation of Eu3+ ions and the change of distribution coefficient of Zn2+ as its incorporating content. In the meantime, the phonon sideband spectra of Zn-incorporated samples were recorded.