对未掺杂的In0.22Ga0.78As/GaAs量子阱材料开展了能量为1 MeV、电子注量达1×1016 /cm2的电子束辐照实验。实验结果显示，电子束轰击量子阱材料，通过能量传递在材料中引入缺陷，导致光致发光减弱；电子束辐照后的量子阱中同时存在应力释放和原子互混现象，导致量子阱的发光峰先红移后蓝移；辐照后的量子阱发光波长取决于应变弛豫和扩散的共同作用。

The experiment of 1 MeV electron beam irradiating undoped In0.22Ga0.78As/GaAs quantum well material with electron dose of 1×1016/cm2 is conducted. The experimental results indicate that, when quantum well material irradiated, the defects occur as a result of energy transfer in the material which degrades the photoluminescence. As for the irradiated quantum wells, the stress relaxation and atom intermixing coexist which result in the photoluminescence peak first red-shifting and then blue-shifting, and their photoluminescence wavelengths are determined by the coaction of strain relaxation and diffusion.