随着光网络通信容量的高速增长, 将分立的光学器件集成化以减小器件尺寸、降低成本成为光电子器件发展的必然趋势。光子集成回路具有尺寸小、功耗低、质量轻等优点, 是解决未来宽带光网络能耗大、体积大、容量小等问题的关键技术。综述了基于多项目晶圆流片的规模化光子集成技术, 主要包括硅基光子集成技术、Ⅲ-V族磷化铟集成技术, 以及以氮化硅和二氧化硅多层波导结构为基础的TriPleX集成技术; 介绍了目前可以提供这3种多项目晶圆流片光子集成技术的代工平台以及利用这些代工平台实现的一些光子集成芯片, 并对这些平台的工艺参数进行了比较。

With the rapid growth of communication capacity of optical networks, integrating discrete optical devices into a single chip to reduce footprint and cost becomes a development of optoelectronic devices. Photonic integrated circuit has many advantages such as small footprint, low power consumption and light weight, and it is a key technology for future broad-bandwidth optical networks to solve the problems of large energy consumption, large volume and small capacity. We review three kinds of large-scale photonic integration technologies which are based on multi-project wafer flow sheets, including silicon-based photonic integration technology, Ⅲ-Ⅴ indium phosphide integration technology and TriPleX integration technology which consists of multilayer waveguides of silicon nitride and silicon oxide. Three foundries supporting multi-project wafer sheet photonic integration technologies are introduced, and some chip examples realized by these foundries are presented. The comparison of technology parameters among different foundries is carried out.