激光与光电子学进展, 2017, 54 (9): 091601, 网络出版: 2017-09-06   

退火温度对分步溅射制备铜锌锡硫薄膜性能的影响 下载: 635次

Influence of Annealing Temperature on Properties of Cu2ZnSnS4 Thin Films Prepared by Step Sputtering
作者单位
云南师范大学太阳能研究所可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650500
摘要
利用ZnS、SnS、CuS三种二元硫化物靶,分步溅射制备了铜锌锡硫(CZTS)薄膜, 并在不同温度下进行退火。研究了退火温度对薄膜晶体结构、组分、表面形貌及光学特性的影响。结果表明, 当退火温度为400 ℃时, CZTS薄膜中含有Cu2S及SnS等多种二次相; 随着退火温度的升高, 二次相的种类逐渐减少, 当退火温度为550 ℃时, 薄膜的表面平整致密, 二次相种类最少; 然而, 当退火温度为600 ℃时, 薄膜表面变得粗糙, 二次相种类增多。
Abstract
Cu2ZnSnS4 (CZTS) thin films are prepared by the step sputtering with three binary-sulfide compound targets of ZnS, SnS, CuS. The annealing is carried out at different temperatures. The influences of annealing temperature on crystal structure, element composition, surface morphology and optical characteristics of CZTS thin films are investigated. The results show that the secondary phases like Cu2S and SnS are found in the CZTS thin films at the annealing temperature of 400 ℃. With the increase of the annealing temperature, the variety of the secondary phases decreases. When the annealing temperature is 550 ℃, the thin film surface is smooth and compact and the variety of the secondary phases is the least. However, when the annealing temperature is 600 ℃, the film surface becomes rough and the variety of the secondary phases increases.

赵其琛, 郝瑞亭, 刘思佳, 杨敏, 陆熠磊, 刘欣星, 常发冉. 退火温度对分步溅射制备铜锌锡硫薄膜性能的影响[J]. 激光与光电子学进展, 2017, 54(9): 091601. Zhao Qichen, Hao Ruiting, Liu Sijia, Yang Min, Lu Yilei, Liu Xinxing, Chang Faran. Influence of Annealing Temperature on Properties of Cu2ZnSnS4 Thin Films Prepared by Step Sputtering[J]. Laser & Optoelectronics Progress, 2017, 54(9): 091601.

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