中国激光, 2016, 43 (9): 0902006, 网络出版: 2018-05-25
皮秒激光熔覆硼掺杂硅纳米浆料的实验研究
B-Doped Nano-Si-Paste by Picosecond Laser Cladding
激光技术 硅浆料 硼掺杂 皮秒激光 硅熔覆层 太阳能电池 laser technique silicon paste boron doping picosecond laser silicon cladding layer solar cell
摘要
采用硼掺杂的硅纳米颗粒和有机载体混合配制的硅浆料作为原料,以标准太阳能电池工艺中的预处理硅片作为基片,在硅片背面丝网印刷硅浆料,烘干后形成硅纳米薄膜,经皮秒激光熔覆形成掺杂的硅熔覆层,同时硼元素扩散进入硅基片。采用激光形貌仪、扫描电子显微镜、二次离子质谱等手段分析了熔覆层的组织结构和硼元素的掺杂情况。结果表明,皮秒激光形成的硅熔覆层组织均匀致密,与基体之间结合紧密,无裂纹、孔洞等缺陷。硅熔覆层中的硼掺杂浓度最高达到3×1019 atom/cm3,在硅基体内扩散深度为0.5~1 μm。在中电电气(南京)光伏有限公司太阳能电池生产线上进行了电池制备实验,平均光电转换效率达到20.3%。
Abstract
Silicon paste prepared by boron doped Si nanoparticles and organic carriers is used as the source. The Si wafers from the standard process of solar cells are used as the substrate. The Si paste is fully screen-printed on the preprocessed Si rear surface and dried, and then a homogenous B-doped Si cladding layer is formed by picosecond laser. During the process, B diffuses into the substrate. The structure of Si cladding layer and doping performance of B element are observed by laser scanning microscope, scanning electron microscope, and secondary ion mass spectroscopy. The results show that the Si cladding layer formed by picosecond laser is uniform and dense without cracks and voids. The highest B concentration in the cladding layer is about 3×1019 atom/cm3, and B is doped into the Si substrate for the depth of 0.5-1 μm. Cells with an average efficiency of 20.3% are fabricated on China Sunergy′s production line.
洪捐, 宣容卫, 黄海冰, 黄因慧, 汪炜. 皮秒激光熔覆硼掺杂硅纳米浆料的实验研究[J]. 中国激光, 2016, 43(9): 0902006. Hong Juan, Xuan Rongwei, Huang Haibing, Huang Yinhui, Wang Wei. B-Doped Nano-Si-Paste by Picosecond Laser Cladding[J]. Chinese Journal of Lasers, 2016, 43(9): 0902006.