高功率氮化镓基蓝光激光器在激光显示、激光照明和材料加工等领域具有很大的应用前景。通过优化蓝光激光器p-AlGaN限制层的生长温度,抑制了量子阱热退化,通过优化量子阱结构,改善了载流子分布,研制出了高功率蓝光激光器。利用变腔面反射率法获得蓝光激光器的内部光学损耗为6.8 cm -1,载流子注入效率为90%。在脉冲工作条件下,蓝光激光器的阈值电流密度为1 kA/cm 2,斜率效率为1.65 W/A,预计在6 kA/cm 2电流密度下,输出光功率能达到4 W;在连续工作条件下,激光器的阈值电流密度为1 kA/cm 2,由于封装散热性能不佳,斜率效率下降为1 W/A,预计在6 kA/cm 2的电流密度下,输出光功率为2.2 W。

High-power blue lasers based on gallium nitride (GaN) have significant prospects in numerous applications, such as laser display, laser lighting, and metal processing. In this study, the epitaxial growth temperature of the p-AlGaN cladding layer of blue lasers is optimized to suppress the thermal degradation of the quantum wells (QWs) and QW structures are optimized to improve the carrier distribution to achieve high-power blue lasers. Upon varying the front facet-coating reflectivity, the internal optical loss and carrier injection efficiency are deduced to be 6.8 cm -1 and 90%, respectively. Under pulsed operations, the threshold current density of the blue lasers is 1 kA/cm 2 and the efficiency gradient is 1.65 W/A. Thus, the expected output power is 4 W at a current density of 6 kA/cm 2. Under continuous-wave operations, the threshold current density of the blue lasers is 1 kA/cm 2 and the efficiency gradient drops to 1 W/A for poor packaging heat dissipation perform. Thus, the output power reaches 2.2 W at a current density of 6 kA/cm 2.