中国激光, 2020, 47 (7): 0701012, 网络出版: 2020-07-10   

GaN垂直腔面发射激光器研究进展 下载: 2796次特邀综述

Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers
作者单位
厦门大学电子科学与技术学院(国家示范性微电子学院), 福建 厦门 361005
摘要
氮化镓(GaN)垂直腔面发射激光器(VCSEL)在近20年来获得了飞速发展,已成为下一代半导体激光器的研究热点。GaN是制造从紫外波段到绿色波段光电子器件的绝佳材料,而VCSEL具有阈值和发散角小、调制速率高,以及输出光束呈圆对称等特点。首先回顾了基于GaN的VCSEL的发展历史,简要介绍了它的主要应用方向;然后讨论了反射镜与谐振腔设计与制造中的关键问题;接着分析了三种不同结构的GaN VCSEL的散热机理,并分析讨论了优化散热的策略;最后介绍了基于GaN的蓝色、绿色和紫外VCSEL的研究进展及最新思路。
Abstract
GaN-based vertical-cavity surface emitting lasers (VCSELs) have undergone rapid advancement in the past 20 years and are considered a research hotspot for next generation semiconductor lasers. GaN is a versatile material for fabricating optoelectronic devices in ultraviolet, blue-violet, and green bands. The characteristics of VCSELs include output beam with circular symmetry, low thresholds, low divergence angles, and high-modulation speeds. In this paper, the development history of GaN-based VCSEL was first reviewed and some of their applications were discussed. Moreover, key challenges in the design and manufacturing of mirrors and cavities were discussed. Further, the heat dissipation mechanism of GaN-based VCSELs with three different structures and their optimization strategies were analyzed and discussed. Finally, research progress and latest advancements in GaN-based blue, green, and ultraviolet VCSELs were reviewed.

杨天瑞, 徐欢, 梅洋, 许荣彬, 张保平, 应磊莹. GaN垂直腔面发射激光器研究进展[J]. 中国激光, 2020, 47(7): 0701012. Yang Tianrui, Xu Huan, Mei Yang, Xu Rongbin, Zhang Baoping, Ying Leiying. Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers[J]. Chinese Journal of Lasers, 2020, 47(7): 0701012.

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