InAs/GaSb应变超晶格红外调制光谱研究
申晨, 折伟林, 李乾, 邢伟荣, 晋舜国, 刘铭. InAs/GaSb应变超晶格红外调制光谱研究[J]. 红外, 2019, 40(2): 14.
SHEN Chen, SHE Wei-lin, LI Qian, XING Wei-rong, JIN Shun-guo, LIU Ming. Research on Infrared Modulation Photoluminescence Spectroscopy for InAs/GaSb Superlattice[J]. INFRARED, 2019, 40(2): 14.
[1] Osbourn G C. Strained-layer Superlattices from Lattice Mismatched Materials ［J］. Appl phys, 1982, 53(3): 1580.
[2] 徐志成. InAs/GaSb II类超晶格探测器结构MBE 生长研究 ［D］. 上海: 中国科学院上海技术物理研究所, 2014.
[3] 折伟林, 田璐, 晋舜国, 等. Hg1-xCdxTe/CdTe/Si薄膜厚度测试方法的研究 ［J］. 激光与红外, 2012, 42(12): 1351-1354.
[4] 陈熙仁. 红外调制光谱研究III-V族窄禁带锑化物与稀铋半导体电子能带结构 ［D］. 上海: 中国科学院上海技术物理研究所, 2015.
[5] Shao J, Lu W, Lu X, et al. Modulated Photoluminescence Spectroscopy with a Step-scan Fourier Transform Infrared Spectrometer ［J］. Rev Sci Instrum, 2006, 77(6): 063104.
[6] Zhang Y H, Ma W Q, Cao Y L, et al. Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors with InSb-like and Mixed Interfaces ［J］. Quantum Electron, 2011, 47(12): 1475.
[7] Wei Y J, Manijeh Razeghi. Modeling of Type-II InAs/GaSb Superlattices Using an Empirical Tight-binding Method and Interface Engineering ［J］. Phys Rev B, 2004, 69(8): 085316.
[8] Wang L W, Wei S H, Mattila T, et al. Multi-band Coupling and Electronic Structure of (InAs)n/(GaSb)n Superlattices ［J］. Phys Rev B, 1999, 60(8): 5590.
申晨, 折伟林, 李乾, 邢伟荣, 晋舜国, 刘铭. InAs/GaSb应变超晶格红外调制光谱研究[J]. 红外, 2019, 40(2): 14. SHEN Chen, SHE Wei-lin, LI Qian, XING Wei-rong, JIN Shun-guo, LIU Ming. Research on Infrared Modulation Photoluminescence Spectroscopy for InAs/GaSb Superlattice[J]. INFRARED, 2019, 40(2): 14.
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