随着压力传感器的小型化和高频化发展,降低成本并提升制造工艺成为当前研究的关键。该文通过优化硅片湿法腐蚀工艺来降低压力传感器的制造成本,并使其性能更贴近设计要求。首先,深入研究了不同浓度TMAH(四甲基氢氧化铵)对硅片腐蚀效果的影响,通过优化腐蚀工艺条件,确定了在80 ℃下使用质量分数为25%的TMAH作为腐蚀液,最终成功获得了表面粗糙度仅为0.121 μm的低粗糙度硅片表面。然后利用有限元模拟技术,对比了质量分数为5% TMAH湿法腐蚀条件下的灵敏度(109.162 mV/MPa)与质量分数为25% TMAH湿法腐蚀条件下的灵敏度(103.276 mV/MPa),而后者更接近设计要求的灵敏度值(100 mV/MPa)。成功总结了高效的湿法腐蚀工艺,并基于该工艺设计了压力传感器的制造流程。预期该流程能以低成本生产出性能更贴近设计要求的压力传感器,为压力传感器的小型化和高频化发展提供了有力的技术支持。AI语音播报 

With the miniaturization and increasing frequency of pressure sensors, it has become critical to develop low-cost manufacturing processes. By studying the effect of different concentrations of TMAH on wafer corrosion, the optimal process conditions were determined to be 80 ℃ with 25 wt% TMAH, achieving a low roughness surface of 0.121 μm. Finite element simulations indicate that the sensitivity under 25 wt% wet etching conditions (103.276 mV/MPa) is closer to the design value of sensitivity (100 mV/MPa) than that under 5 wt% TMAH wet etching (109.162 mV/MPa). An efficient wet etching process is summarized, based on which a pressure sensor manufacturing process was designed. This approach is expected to produce sensors that more closely meet design requirements at a lower cost.