电子倍增CCD倍增要件研究
张灿林, 陈钱, 尹丽菊. 电子倍增CCD倍增要件研究[J]. 光子学报, 2009, 38(11): 2771.
ZHANG Can-lin, CHEN Qian, YIN Li-ju. Multiplication Conditions of EMCCD[J]. ACTA PHOTONICA SINICA, 2009, 38(11): 2771.
[1] 苏学征.EMCCD技术-单光子水平的成像探测[J].现代科学仪器,2005,(2): 51-53.
SU Xue-zheng.EMCCD technology-single photon imaging detection[J].Modern Scientific Instruments,2005,(2): 51-53.
[2] 张灿林,陈钱,周蓓蓓.高灵敏度电子倍增CCD的发展现状[J].红外技术,2007,29(4): 192-195.
ZHANG Can-lin,CHEN Qian,ZHOU Bei-bei.Recent progress toward ultra-sensitivity EMCCD[J].Infrared Technology,2007,29(4): 192-195.
[3] DENVIR D J,CONROY E.Electron multiplying CCD technology: the new ICCD[C].SPIE,2003,4796: 164-174.
[4] 陈晨,许武军,翁东山,等.电子倍增CCD噪音来源和信噪比分析[J].红外技术,2007,29(11): 634-637.
CHEN Chen,XU Wu-qun,WENG Dong-shan,et al.The noise sources and SNR analysis of electronic multiplying CCD[J].Infrared Technology,2007,29(11): 634-637.
[5] Roper Scientific,Inc.On-chip multiplication gain technical note #14[EB/OL].E2V Technologies.(2008-12-6).http://www.photomet.com/resources/technotes/pdfs/onchipgain.pdf.
[6] MACKAY C D,TUBBS R N,BELL R,et al.Sub-electron read noise at MHz pixel rates[C].SPIE,2001,4306: 289-298.
[7] SELBERHERR S.Analysis and simulation of semiconductor devices[M].New York: Springer-Verlag Press,1984.
[8] . Ionization rates for holes and electrons in silicon[J]. Phys Rev, 1957, 105: 1246.
[9] . Impact ionization in silicon: a review and update[J]. Solid-State Electronics, 1990, 33(6): 705-718.
张灿林, 陈钱, 尹丽菊. 电子倍增CCD倍增要件研究[J]. 光子学报, 2009, 38(11): 2771. ZHANG Can-lin, CHEN Qian, YIN Li-ju. Multiplication Conditions of EMCCD[J]. ACTA PHOTONICA SINICA, 2009, 38(11): 2771.