[1] Fluck R, Braun B, Gini E, et al. Passively Q-switched 1.34 μm Nd:YVO4 microchip laser with semiconductor saturable-absorber mirrors ［J］. Opt. Lett., 1997, 22(13): 991-993.

[2] Savitski V G, Malyarevich A M, Yumashev K V, et al. Diode-pumped Nd:YVO4 and Nd:KGd(WO4 )2 1.3 μm lasers passively Q-switched with PbS-doped glass ［J］. Appl. Phys. B, 2003, 79: 253-256.

[3] Gerschütz F, Fischer M, Koeth J, et al. 1.3 μm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation ［J］. Opt. Expr., 2008, 16(8): 5596-5601.

[4] Katsuaki T, Denis G, Damien B, et al. Electrically pumped 1.3 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer ［J］. Opt. Expr., 2010, 18(10): 10604-10608.

[5] Malyarevich A M, Denisov I A, Yumashev K V, et al. V:YAG-a new passive Q-switch for diode-pumped solid-state lasers ［J］. Appl. Phys. B, 1998, 67: 555-558.

[6] Jabczynski J K, Zendzian W, Mierczyk Z, et al. Chromium-doped LiCAF laser passively Q switched with a V3 + :YAG crystal ［J］. Appl. Opt., 2001, 40(36): 6638-6645.

[7] Agnesi A, Guandalimi A, Reali G, et al. Diode pumped Nd:YVO4 laser at 1.34 μm Q-switched and mode locked by a V3 + :YAG saturable absorber ［J］. Opt. Comm., 2001, 194: 429-433.

[8] Podlipensky A V, Yumashev K V, Kuleshov N V, et al. Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber ［J］. Appl. Phys. B, 2003, 76: 245-247.

[9] Zhang Hengli, Du Keming. Development of laser diode end-pumped slab laser with hybrid resonator ［J］. Chinese Journal of Quantum Electronics 6(量子电子学报), 2010, 27(4): 385-392 (in Chinese).

[10] Li Zhang, Yuan Yijun. Mode-locked Nd:YAG laser pumped by LD ［J］. Chinese Journal of Quantum Electronics 6(量子电子学报), 2011, 28(3): 298-302 (in Chinese).

[11] Ma Mingjun, Ye Bing, Ma Xiaomin. Electro-optically Q-switched 2.94 μm Er:YAG laser and its applications ［J］. Chinese Journal of Quantum Electronics 6(量子电子学报), 2010, 27(6): 688-692 (in Chinese).

[12] Koechner W. Solid-State Laser Engineering ［M］. 5th edition, 1999, Springer Verlag.

[13] Chen Y F, Lee L J, Huang T M, et al. Study of high-power diode-end-pumped Nd:YVO4 laser at 1.34 μm: Influence of Auger upconversion ［J］. Opt. Comm., 1999, 163: 198-202.

[14] Ogilvy H, Withford M, et al. Efficient diode double-end-pumped Nd:YVO4 laser operating at 1.34 μm ［J］. Opt. Expr., 2003, 11(19): 2411-2415.

[15] Zayhowski J J, Ochoa J, Mooradian A. Gain-switched pulsed operation of microchip lasers ［J］. Opt. Lett., 1989, 14(23): 1318-1320.

[16] Anthony S E. Lasers ［M］. California: Mill Valley, 1986.