发光学报, 2011, 32 (7): 720, 网络出版: 2011-08-10   

GaN基PIN结构X射线探测器

GaN-based PIN Detectors for X-ray Detector
付凯 1,2,*于国浩 1陆敏 1
作者单位
1 中国科学院 苏州纳米技术与纳米仿生研究所, 江苏 苏州215123
2 中国科学院 研究生院, 北京100039
引用该论文

付凯, 于国浩, 陆敏. GaN基PIN结构X射线探测器[J]. 发光学报, 2011, 32(7): 720.

FU Kai, YU Guo-hao, LU Min. GaN-based PIN Detectors for X-ray Detector[J]. Chinese Journal of Luminescence, 2011, 32(7): 720.

参考文献

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[4] Ryu Han-Youl, Ha Kyoung-Ho, Chae Jung-Hye, et al. Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics [J]. Appl. Phys. Lett., 2005, 87(9):093506-1-3.

[5] Mishra U K, Parikh P, Wu Y F. AlGaN/GaN HEMTs—an overview of device operation and applications [J]. Proceedings of the IEEE, 2002, 90(6):1022-1031.

[6] Wu Y F, Saxler A, Moore M, et al. 30-W/mm GaN HEMTs by field plate optimization [J]. Electron Device Lett. IEEE, 2004, 25(3):117-119.

[7] Zhou Mei, Zhao Degang. Effect of structure parameters on the performances of GaN Schottky barrier ultraviolet photodetectors and device design [J]. Chin. J. Lumin. (发光学报), 2009, 30(6):824-831 (in Chinese).

[8] Zhao Z M, Jiang R L, Chen P, et al. Metal-semiconductor-metal GaN ultraviolet photodetectors on Si(111) [J]. Appl. Phys. Lett., 2000, 77(3):444-446.

[9] Szweda R. GaN and SiC detectors for radiation and medicine [J]. Ⅲ-Vs Review, 2005, 18(7):40-41.

[10] Sellin P J, Vaitkus J. New materials for radiation hard semiconductor detectors [J]. Nuclear Instruments and Methods in Physics Research Section A:Accelerators, Spectrometers, Detectors and Associated Equipment, 2006, 557(2):479-489.

[11] Vaitkus J, Cunningham W, Gaubas E, et al. Semi-insulating GaN and its evaluation for α particle detection [J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003, 509(1-3):60-64.

[12] Grant J, Bates R, Cunningham W, et al. GaN as a radiation hard particle detector [J]. Nuclear Instruments and Methods in Physics Research Section A:Accelerators, Spectrometers, Detectors and Associated Equipment, 2007, 576(1):60-65.

[13] Duboz Jean-Yves, Lauegt Marguerite, Schenk David, et al. GaN for X-ray detection [J]. Appl. Phys. Lett., 2008, 92(26):263501-1-3.

[14] Duboz Jean-Yves, Beaumont Bernard, Reverchon Jean-Luc, et al. Anomalous photoresponse of GaN X-ray Schottky detectors [J]. J. Appl. Phys., 2009, 105(11):114512-1-7.

[15] Fu Kai, Yu Guohao, Lu Min. Time response of GaN Schottky detector for X-ray detection [J]. Atomic Energy Science and Technology (原子能科学技术), 2010, 44(Suppl.):449-452 (in Chinese).

付凯, 于国浩, 陆敏. GaN基PIN结构X射线探测器[J]. 发光学报, 2011, 32(7): 720. FU Kai, YU Guo-hao, LU Min. GaN-based PIN Detectors for X-ray Detector[J]. Chinese Journal of Luminescence, 2011, 32(7): 720.

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