[1] . Gallium nitride-based nanowire radial heterostructures for nanophotonics[J]. Nano Letters, 2004, 4(10): 1975-1979.

[2] Li Zhixin, Wang Hongyan, Xin Wei, et al. Mean number of optical phonons of weak-coupling exciton in parabolic quantum dot ［J］. Chin. J. Lumin. (发光学报), 2008, 29(1):1-4 (in English).

[3] . Quantum-well heterostructure lasers[J]. IEEE J. Quantum Electronics, 1980, 16(2): 170-186.

[4] . Quantum wells for optical information processing[J]. Opt. Eng., 1987, 26(5): 368-372.

[5] Weisbuch C, Nagle J. Quantum well semiconductor laser: US, 5081634 ［P］. 1992-01-12. http://www.google.com/patents hl=zh-CN&lr=&vid=USPAT5081634&id=ChchAAAAEBAJ&oi=fnd&dq=Quantum+well+semiconductor+laser & printsec=abstract#v=onepage&q=&f.

[6] . GaN/AlN-based quantum-well infrared photodetector for 1.55 μm[J]. Appl. Phys. Lett., 2003, 83(3): 572-574.

[7] Wu Dianzhong, Wang Wenxin, Yang Chengliang, et al. InAs quantum dots with InGaAs caplayer infrared detector grown by MBE ［J］. Chin. J. Lumin.(发光学报), 2009, 30(2):209-213 (in Chinese).

[8] . First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well[J]. Appl. Phys. Lett., 1985, 46(12): 1156-1158.

[9] . Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides[J]. Appl. Phys. Lett., 1987, 50(5): 273-275.

[10] . New mode of IR detection using quantum wells[J]. Appl. Phys. Lett., 1984, 45(6): 649-651.

[11] . Intersubband transitions in quantum well heterostructures with delta-doped barriers[J]. Appl. Phys. Lett., 1992, 61(9): 1081-1083.

[12] . Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells[J]. Appl. Phys. Lett., 2003, 82(17): 2764-2766.

[13] . Piezoreflectance study of a GaAs/Al0.23Ga0.77As asymmetric triangular quantum well heterostructure[J]. Semicond. Sci. Technol., 1995, 10(7): 1009-1016.

[14] Kastalsky A, Peeters F M, Chan W K, et al. Novel nonlinear transport phenomena in a triangular quantum well ［J］. Semicond. Sci. Technol., 1992, 7(3B):B530-B532.

[15] . Efficient photoluminescence from triangular quantum wells at the interface of an InP/In0.53Ga0.47As heterostructure[J]. JETP Lett., 1998, 67(10): 826-831.

[16] Chen B, Guo K X, Wang R Z, et al. Liner and nonliner intersubband optical absorption in double trangular quantum wells ［J］. Solid State Commun., 2009, 149(7-8):310-314.

[17] . Resonant inelastic light scattering in remotely doped wide parabolic GaAs/AlxGa1-xAs quantum wells[J]. Phys. Rev. B, 1993, 48(7): 4524-4529.

[18] . Electron Raman scattering in cylindrical quantum wires[J]. Eur. Phys. J. B, 2006, 53(2): 209-212.

[19] . Electron Raman scattering in cylindrical quantum wires[J]. J. Phys.: Condens. Matter, 1995, 7(36): 7273-7281.

[20] . Well width-dependent electron Raman scattering in ZnS/CdSe cylindrical quantum dot quantum well[J]. J. Raman Spectrosc., 2008, 39(7): 953-958.

[21] . Studies of electronic raman scattering in CdS/HgS cylindrical quantum dot quantum well structures[J]. Thin Solid Film, 2008, 516(10): 3405-3410.

[22] Pinczuk A, Burstien E. Light Scattering in Solids I ［M］. Edited by Cardona M, Heidelberg: Springer, Springer Topics in Applied Physics, 1983, 23.

[23] . Lattice vibrations in semiconductor superlattices[J]. Superlatt. Microstruct, 1990, 7(3): 183-192.

[24] . Electron Raman scattering in asymmetrical multiple quantum wells[J]. J. Phys.: Condens. Matter, 2005, 17(28): 4451-4461.

[25] . Extended eigenfunctions in asymmetric double triangular quantum wells in weak electric fields[J]. Solid-State Electronics, 2002, 46(1): 89-96.

[26] . GaAs, AlAs, and AlxGa1-xAs material parameters for use in research and device applications[J]. J. Appl.Phys., 1985, 58(3): R1-R29.

[27] . Surface phonons and alloying effects in (CdS)x(CdSe)1-x nanospheres[J]. Solid State Commun., 1994, 90(9): 567-570.