研究了Sb/In比对200 nm InAs_xSb_1-x薄膜传输特性和晶体质量的影响。通过对称（004）扫描和非对称（115）扫描的HRXRD计算了所有样品中InAs_xSb_1-x薄膜的Sb含量。计算结果表明，在Sb/In比为6和As/In比为3的条件下生长的InAs_xSb_1-x薄膜中，Sb组分为0.6。InAs_xSb_1-x薄膜在室温下测得的最高电子迁移率为28 560 cm²/V·s。同时，本文还研究了Sb/In比和As/In比对Al_0.2In_0.8Sb/InAs_xSb_1-x量子阱异质结的输运性质和晶体质量的影响。结果显示，在Sb/In比为6和As/In比为3的条件下生长的沟道厚度为30 nm的Al_0.2In_0.8Sb/InAs_0.4Sb_0.6量子阱异质结的最高电子迁移率为28 300 cm²/V·s，最小表面粗糙度为0.68 nm。通过优化生长条件，我们的样品具有更好的晶体质量和更光滑的表面形貌。AI语音播报 

This paper discusses the influence of Sb/In ratio on the transport properties and crystal quality of the 200 nm InAs_xSb_1-x thin film. The Sb content of InAs_xSb_1-x thin film in all samples was verified by HRXRD of the symmetrical 004 reflections and asymmetrical 115 reflections. The calculation results show that the Sb component was 0.6 in the InAs_xSb_1-x thin film grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3, which has the highest electron mobility (28 560 cm²/V·s) at 300 K. At the same time, the influence of V/III ratio on the transport properties and crystal quality of Al_0.2In_0.8Sb/InAs_xSb_1-x quantum well heterostructures also has been investigated. As a result, the Al_0.2In_0.8Sb/InAs_0.4Sb_0.6 quantum well heterostructure with a channel thickness of 30 nm grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3 has a maximum electron mobility of 28 300 cm²/V·s and a minimum RMS roughness of 0.68 nm. Through optimizing the growth conditions, our samples have higher electron mobility and smoother surface morphology.