Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate
CHEN Li-qun, CHEN Yang-hua, LI Cheng. Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate[J]. 光电子快报（英文版）, 2014, 10(3): 213.
[1] Yijie Huo, Hai Lin, Robert Chen, M. Makarova, Yiwen Rong, Mingyang Li, T. I. Kamins, J. Vuckovic and J. S. Harris, Applied Physics Letters 98, 011111 (2011).
[2] Xiaoxin Wang, Haofeng Li, R. Camacho-Aguilera, Yan Cai, L. C. Kimerling, J. Michel and Jifeng Liu, Optics Letters 38, 652 (2013).
[3] M. Schmid, M. Oehme, M. Gollhofer, M. Kasche, E. Kasper and J. Schulze, Electroluminescence of Unstrained and Tensile Strained Ge-on-Si LEDs, IEEE 9th International Conference on IEEE, 135 (2012).
[4] Yanghua Chen, Cheng Li, Zhiwen Zhou, Hongkai Lai, Songyang Chen, Wuchang Ding, Buwen Cheng and Yude Yu, Applied Physics Letters 94, 141902 (2009).
[6] W. J. Fan, Journal of Applied Physics 114, 183106 (2013).
[7] Cheng Li, Yanghua Chen, Zhiwen Zhou, Hongkai Lai and Songyan Chen, Applied Physics Letters 95, 251102 (2009).
[8] M. Schmid, M. Oehme, M. Gollhofer, R. Korner, M. Kachel, E. Kasper and J. Schulze, Thin Solid Films, 2013.
[9] Y.H. Kuo, Y.K. Lee, Y. Ge, S. Ren, J.E. Roth, T.I. Kamins, D.A.B. Miller and J.S. Harris, Nature 437, 1334 (2005).
[10] S. Tsujino, H. Sigg, G. Mussler, D. Chrastina and H. von Kanel, Applied Physics Letters 89, 262119 (2006).
[11] M. Bonfanti, E. Grilli, M. Guzzi, M. Virgilio, G. Grosso, D. Chrastina, G. Isella, H. von Kanel and A. Neels, Physical Review B 78, 041407 (2008).
[12] Yanghua Chen, Cheng Li, Hongkai Lai and Songyan Chen, Nanotechnology 21, 115207 (2010).
[13] Chuanbo Li, Institute of Semiconductors, Chinese Academy of Science, Beijing, 2000.
CHEN Li-qun, CHEN Yang-hua, LI Cheng. Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate[J]. 光电子快报（英文版）, 2014, 10(3): 213.
PDF全文
