碲镉汞APD平面型PIN结构仿真设计
Yu-Shun CHENG, Hui-Jun GUO, Hao LI, Lu CHEN, Chun LIN, Li HE. 碲镉汞APD平面型PIN结构仿真设计[J]. 红外与毫米波学报, 2020, 39(1): 6.
Yu-Shun CHENG, Hui-Jun GUO, Hao LI, Lu CHEN, Chun LIN, Li HE.
[1] Frank D., Grave M., Beutel P., et al. Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency[J]. Appl, 2014, 22: 277-282.
[2] Oshima R., Makita K., Mizuno H., InGaAsP MBE-grown, et al. 0 eV bandgap on InP (001) substrates for application to multijunction solar cells[J][J]. Japanese Journal of Applied Physics, 1, 2015(54): 14-14.
[3] Wu Y., Ji L., Dai P., et al. Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells[J]. Japanese Journal of Applied Physics, 2016, 55: 022301-4.
[4] Zhao Y., Dong J., Li K., et al. InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells[J]. Journal of Semiconductors, 2015, 36: 044011-4.
[7] Lu H, Li X, Zhang W, et al. MOVPE grown 1.0 eV InGaAsP solar cells with bandgap-voltage offset near to ideal radiative recombination limit[J]. Solar Energy Materials and Solar Cells, 2019, 196: 65-69.
[8] Boulou M, Bois D. Cathodoluminescence measurements of the minority‐carrier lifetime in semiconductors[J]. Journal of Applied Physics, 1977, 48(11): 4713-4721.
[9] Ahenkiel R. K., Lundstrom M. S., Carriers Minority. Physics and Applications, Semiconductors and Semimetals[J]. Inc., 1993, 39: 57-59.
[10]
[11]
[12]
[13] Zhu D H, Wang Z G, Liang J B, et al. 808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice[J]. JOURNAL OF CRYSTAL GROWTH, 1997, 175: 1004-1008.
[14] Chelakara R V, Islam M R, Neff J G, et al. Growth of high-quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition[J]. Journal of Crystal Growth, 1994, 145(1-4): 179-186.
[15] Givens M E, Mawst L J, Zmudzinski C A, et al. Effect of compositionally graded and superlattice buffer layers on the device performance of graded barrier quantum well heterostructure laser diodes[J]. Applied Physics Letters, 1987, 50(6): 301-303.
[16] Zhang J, Chen X Y, Ma Y J, et al. Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy[J]. Journal of Crystal Growth, 2019, 512: 84-89.
Yu-Shun CHENG, Hui-Jun GUO, Hao LI, Lu CHEN, Chun LIN, Li HE. 碲镉汞APD平面型PIN结构仿真设计[J]. 红外与毫米波学报, 2020, 39(1): 6. Yu-Shun CHENG, Hui-Jun GUO, Hao LI, Lu CHEN, Chun LIN, Li HE.