中国激光, 2006, 33 (12): 1671, 网络出版: 2006-12-30   

大功率半导体激光器热弛豫时间的测量

Measurement of Thermal Relaxation Time of High Power Semiconductor Lasers
作者单位
中国科学院上海光学精密机械研究所, 上海 201800
引用该论文

程灿, 辛国锋, 皮浩洋, 瞿荣辉, 方祖捷. 大功率半导体激光器热弛豫时间的测量[J]. 中国激光, 2006, 33(12): 1671.

程灿, 辛国锋, 皮浩洋, 瞿荣辉, 方祖捷. Measurement of Thermal Relaxation Time of High Power Semiconductor Lasers[J]. Chinese Journal of Lasers, 2006, 33(12): 1671.

参考文献

[1] . Edriz, Mitral Vakili, Gerald S. Browder et al.. High power diode laser arrays[J]. IEEE J. Quantum Electron., 1992, 28(4): 952-965.

[2] R. Comaskey, R. Beach, D. Mundinger. Diode pumped 70 watt average power Nd:YAG laser [C]. OSA Proc. Advanced Solid-State Lasers, 1991, 10:251~254

[3] H. Injeyan, R. J. St. Pierre, J. G. Berg et al.. Diode array pumped kilowatt laser development [C]. Tech. Dig. 1994 Conf. Lasers Electro-Optics (CLEO), 1994, paper CThC1. 281

[4] H. Y. Zhang, D. Pinjala, P. K. Chan et al.. Thermal analysis and modeling of diode array integerated with directional liquid-cooled heat sink [C]. 2004 Inter Society Conference on Thermal Phenomenon, 2004. 331~338

[5] R. Pernas, M. Sanchez, R. Pena-Sierra et al.. A new method to determine the thermal resistance in semiconductor lasers [C]. Fourth IEEE International Caracas Conference on Devices, Circuits and Systems, 2002. 17~19

[6] Jason Carter, David Snyder, Jerry Reichenbaugh. Temperature dependence of optical wavelength shift as a validation technique for technique for pulsed laser diode array thermal modeling [C]. Proceeding of IEEE Semiconductor Thermal Measurement & Management Symposium, 2003. 357~363

[7] . I. Abdelkader, H. H. Hausien, J. D. Martin. Temperature rise and thermal rise-time measurement of a semiconductor laser diode[J]. J. Rev. Sci. Instrum., 1992, 63(3): 2004-2007.

[8] . . Measurement of thermal rise-time of a laser diode based on spectrally resolved waveforms[J]. Opt. Commun., 2006, 206(1): 223-226.

[9] . Voss, C. Lier, U. Menzel et al.. Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks[J]. J. Appl. Phys., 1996, 79(2): 1170-1172.

程灿, 辛国锋, 皮浩洋, 瞿荣辉, 方祖捷. 大功率半导体激光器热弛豫时间的测量[J]. 中国激光, 2006, 33(12): 1671. 程灿, 辛国锋, 皮浩洋, 瞿荣辉, 方祖捷. Measurement of Thermal Relaxation Time of High Power Semiconductor Lasers[J]. Chinese Journal of Lasers, 2006, 33(12): 1671.

本文已被 4 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!