[1] NAKAMURA S,MUKAI T,SENOH M. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes ［J］. Appl. Phys. Lett., 1994,64(13):1687-1689.

[2] LI G Q,WANG W L,YANG W J,et al.. GaN-based light-emitting diodes on various substrates:a critical review ［J］. Rep. Prog. Phys., 2016,79(5):056501.

[3] KIM Y,CRUZ S S,LEE K,et al.. Remote epitaxy through graphene enables two-dimensional material-based layer transfer ［J］. Nature, 2017,544(7650):340-343.

[4] MEYAARD D S,CHO J,SCHUBERT E F,et al.. Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodes ［J］. Appl. Phys. Lett., 2013,103(12):121103-1-4.

[5] WONG W S,SANDS T,CHEUNG N W. Damage-free separation of GaN thin films from sapphire substrates ［J］. Appl. Phys. Lett., 1998,72(5):599-601.

[6] KOMA A,SUNOUCHI K,MIYAJIMA T. Fabrication and characterization of heterostructures with subnanometer thickness ［J］. Microelectron. Eng., 1984,2(1-3):129-136.

[7] FERNNDEZ-GARRIDO S,RAMSTEINER M,GAO G H,et al.. Molecular beam epitaxy of GaN nanowires on epitaxial graphene ［J］. Nano Lett., 2017,17(9):5213-5221.

[8] CHUNG K,LEE C H,YI G C. Transferable GaN layers grown on ZnO-Coated graphene layers for optoelectronic devices ［J］. Science, 2010,330(6004):655-657.

[9] KONG W,LI H S,QIAO K,et al.. Polarity governs atomic interaction through two-dimensional materials ［J］. Nat. Mater., 2018,17(11):999-1004.

[10] NOVOSELOV K S,GEIM A K,MOROZOV S V,et al.. Electric field effect in atomically thin carbon films ［J］. Science, 2004,306(5696):666-669.

[11] QI L,XU Y,LI Z Y,et al.. Stress analysis of transferable crack-free gallium nitride microrods grown on graphene/SiC substrate ［J］. Mater. Lett., 2016,185:315-318.

[12] PARK S,RUOFF R S. Chemical methods for the production of graphenes ［J］. Nat. Nanotechnol., 2009,4(4):217-224.

[13] WINTTERLIN J,BOCQUET M L. Graphene on metal surfaces ［J］. Surf. Sci., 2009,603(10-12):1841-1852.

[14] RAO C N R,SOOD A K,SUBRAHMANYAM K S,et al.. Graphene:the new two-dimensional nanomaterial ［J］. Angew. Chem. Int. Ed., 2009,48(42):7752-7777.

[15] XU Y,CAO B,LI Z Y,et al.. Growth model of van der Waals epitaxy of films:a case of AlN films on multilayer graphene/SiC ［J］. ACS Appl. Mater. Interfaces, 2017,9(50):44001-44009.

[16] HONG Y J,YANG J W,LEE W H,et al.. Van der Waals epitaxial double heterostructure:InAs/single-layer graphene/InAs ［J］. Adv. Mater., 2013,25(47):6847-6853.

[17] QI Y,WANG Y Y,PANG Z Q,et al.. Fast growth of strain-free AlN on graphene-buffered sapphire ［J］. J. Am. Chem. Soc., 2018,140(38):11935-11941.

[18] CHOI J K,HUH J H,KIM S D,et al.. One-step graphene coating of heteroepitaxial GaN films ［J］. Nanotechnology,2012,23(43):435603-1-8.

[19] CHEN Z L,ZHANG X,DOU Z P,et al.. High-brightness blue light-emitting diodes enabled by a directly grown graphene buffer layer ［J］. Adv. Mater., 2018,30(30):1801608.

[20] CHEN X D,LIU Z B,ZHENG C Y,et al.. High-quality and efficient transfer of large-area graphene films onto different substrates ［J］. Carbon, 2013,56:271-278.

[21] LIANG X L,SPERLING B A,CALIZO I,et al.. Toward clean and crackless transfer of graphene ［J］. ACS Nano, 2011,5(11):9144-9153.

[22] GEIM A K,NOVOSELOV K S. The rise of graphene ［J］. Nat. Mater., 2007,6(3):183-191.

[23] SEOL J H,JO I,MOORE A L,et al.. Two-dimensional phonon transport in supported graphene ［J］. Science, 2010,328(5975):213-216.

[24] NAIR R R,BLAKE P,GRIGORENKO A N,et al.. Fine structure constant defines visual transparency of graphene ［J］. Science,2008,320(5881):1308.

[25] SUN M L,TANG W C,REN Q Q,et al.. First-principles study of the alkali earth metal atoms adsorption on graphene ［J］. Appl. Surf. Sci., 2015,356:668-673.

[26] SEVINLI H,TOPSAKAL M,DURGUN E,et al.. Electronic and magnetic properties of 3d transition-metal atom adsorbed graphene and graphene nanoribbons ［J］. Phys. Rev. B, 2008,77(19):195434-1-7.

[27] CHEN Z L,LIU Z Q,WEI T B,et al.. Improved epitaxy of AlN film for deep-ultraviolet light-emitting diodes enabled by graphene ［J］. Adv. Mater., 2019,31(23):1807345-1-8.

[28] SHIN Y J,WANG Y Y,HUANG H,et al.. Surface-energy engineering of graphene ［J］. Langmuir, 2010,26(6):3798-3802.

[29] REN F,YIN Y,WANG Y Y,et al.. Direct growth of AlGaN nanorod LEDs on graphene-covered Si ［J］. Materials, 2018,11(12):2372-1-9.

[30] LI Y,ZHAO Y,WEI T B,et al.. Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film ［J］. Jpn. J. Appl. Phys., 2017,56(8):085506.

[31] WANG Y Y,DHEERAJ D,LIU Z Q,et al.. AlGaN nanowires grown on SiO2/Si (100) using graphene as a buffer layer ［J］. Cryst. Growth Des., 2019, 19(10):5516-5522.

[32] GUPTA P,RAHMAN A A,SUBRAMANIAN S,et al.. Layered transition metal dichalcogenides:promising near-lattice-matched substrates for GaN growth ［J］. Sci. Rep., 2016,6:23708-1-8.

[33] ZHAO C,NG T K,TSENG C C,et al.. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters ［J］. RSC Adv., 2017,7(43):26665-26672.

[34] YIN Y,REN F,WANG Y Y,et al.. Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2 ［J］. Materials, 2018,11(12):2464-1-9.

[35] ALASKAR Y,ARAFIN S,WICKRAMARATNE D,et al.. Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer ［J］. Adv. Funct. Mater., 2014,24(42):6629-6638.

[36] FERREYRA R A,ZHU C Y,TEKE A,et al.. Group Ⅲ nitrides ［M］. KASAP S,CAPPER P. Springer Handbook of Electronic and Photonic Materials. Cham:Springer, 2017.

[37] CHUNG K,YOO H,HYUN J K,et al.. Flexible GaN light-emitting diodes using GaN microdisks epitaxial laterally overgrown on graphene dots ［J］. Adv. Mater., 2016,28(35):7688-7694.

[38] SHIH C J,STRANO M S,BLANKSCHTEIN D. Wetting translucency of graphene ［J］. Nat. Mater., 2013,12(10):866-869.

[39] RAFIEE J,MI X,GULLAPALLI H,et al.. Wetting transparency of graphene ［J］. Nat. Mater., 2012,11(3):217-222.