梯度掺杂GaN光电阴极的光谱响应测试与分析
李飙, 常本康, 陈文聪. 梯度掺杂GaN光电阴极的光谱响应测试与分析[J]. 量子电子学报, 2017, 34(1): 99.
LI Biao, CHANG Benkang, CHEN Wencong. Spectral response measurement and analysis of gradient-doping GaN photocathode[J]. Chinese Journal of Quantum Electronics, 2017, 34(1): 99.
[1] Siegmund O, Vallerga J, Mcphate J, et al. Development of GaN photocathodes for UV detectors[J]. Nucl. Instrum. and Methods in Phys. Res., Sect. A, 2006, 567(1): 89-92.
[2] Siegmund O, Hull J, Tremsin A, et al. Gallium nitride photocathodes for imaging photon counters[C]. SPIE, 2010, 7732: 77324T1.
[3] Liu Z. Surface Characterization of Semiconductor Photocathode Structures[D]. Stanford: Stanford University, 2005.
[6] Dabiran A M, Wowchak A M, Chow P P, et al. Direct deposition of GaN-based photocathodes on microchannel plates[C]. SPIE, 2009, 7212: 721213.
[7] Tripathi N, Bell L, Nikzad S, et al. Novel Cs-free GaN photocathodes[J]. J. Electron. Mater., 2011, 40(4): 382-387.
[8] Qiao Jianliang, Tian Si, Chang Benkang, et al. Activation mechanism of negative electron affinity GaN photocathode[J]. Acta Physica Sinica (物理学报), 2009, 58(8): 5847-5851 (in Chinese).
[9] Chang B K, Du X Q, Liu L, et al. The automatic recording system of dynamic spectral response and its applications[C]. SPIE, 2003, 5209: 209-218.
[10] Spicer W E, Herrera G A. Modern theory and application of photocathodes[C]. SPIE, 1993, 2022: 18-33.
[11] Qiao Jianliang, Chang Benkang, Qian Yunsheng, et al. Quantum efficiency recovery of reflection-mode NEA GaN photocathode[J]. Acta Physica Sinica (物理学报), 2011, 60(1): 017903 (in Chinese).
[12] Zong Z Y, Qian Y S, Chang B K. Analysis of on-line measured spectral responses of NEA photocathodes[C]. SPIE, 2001, 4580: 623-631.
[13] Qian Yunsheng, Zong Zhiyuan, et al. On line measurement of spectral response of GaAs photocathodes[J]. Journal of Vacuum Science and Technology (真空科学与技术), 2000, 20(5): 305-307 (in Chinese).
[14] Liu Z, Machuca F, Pianetta P, et al. Electron scattering study within the depletion region of the GaN (0001) and the GaAs (100) surface[J]. Appl. Phys. Lett., 2004, 85(9): 1541-1543.
[15] Qiao Jianliang, Chang Benkang, Du Xiaoqing, et al. Quantum efficiency decay mechanism for reflection mode negative electron affinity GaN photocathode[J]. Acta Physica Sinica (物理学报), 2010, 59(4): 2855-2859 (in Chinese).
[16] Qiao Jianliang, Niu Jun, Yang Zhi, et al. Study of NEA GaN photocathode surface model[J]. Optical Technique (光学技术), 2009, 35(1): 145-151 (in Chinese).
李飙, 常本康, 陈文聪. 梯度掺杂GaN光电阴极的光谱响应测试与分析[J]. 量子电子学报, 2017, 34(1): 99. LI Biao, CHANG Benkang, CHEN Wencong. Spectral response measurement and analysis of gradient-doping GaN photocathode[J]. Chinese Journal of Quantum Electronics, 2017, 34(1): 99.
PDF全文
