[1] KARKARE S, BOULET L, CULTRERA L, et al.. Ultrabright and ultrafast Ⅲ-V semiconductor photocathodes ［J］. Phys. Rev. Lett., 2014, 112(9):097601.

[2] KARKARE S, DIMITROV D, SCHAFF W, et al.. Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes ［J］. J. App. Phys., 2013, 113:104904.

[3] SCHWEDE J W, SARMIENTO T, NARASIMHAN V K, et al.. Photon-enhanced thermionic emission from heterostructures with low interface recombination ［J］. Nat. Commun., 2013, 4:67-72.

[4] DOWELL D H, BAZAROV I, DUNHAM B, et al.. Cathode R&D for future light sources ［J］. Nucl. Instrum. Methods Phys. Res., 2010, 622(3):685-697.

[5] 姜德龙, 房立峰, 那延祥, 等. 微通道板离子壁垒膜粒子阻透特性的蒙特卡罗模拟 ［J］. 发光学报, 2011, 32(8):816-820.

    JIANG D L, FANG L F, NA Y X, et al.. Monte-Carlo simulations on the stopping and transmittance characteristics of particles in the ion barrier film of microchannel plate ［J］. Chin. J. Lumin., 2011, 32(8):816-820. ( in Chinese)

[6] ZHAO J, CHANG B K, XIONG Y J, et al.. Influence of the antireflection, window, and active layers on optical properties of exponential-doping transmission-mode GaAs photocathode modules ［J］. Opt. Commun., 2012, 285(5):589-593.

[7] JONES L B, ROZHKOV S A, BAKIN V V, et al.. Cooled transmission-mode NEA-photocathode with a band-graded active layer for high brightness electron source ［J］. Spin Phys.:18th Int. Spin Phys. Symp., 2009, 1149(1):1057-1061.

[8] PHILLIPS C C, HUGHES A E, SIBBERT W. Quantitative XPS surface chemical analysis and direct measurement of the temporal response times of glass-bonded NEA GaAs transmission photocathodes ［J］. J. Phys. D: Appl. Phys., 1984, 17:1713-1725.

[9] AULENBACHER K, SCHULER J, HARRACH D V. Pulse response of thin Ⅲ/V semiconductor photocathodes ［J］. J. Appl. Phys., 2002, 92(12):7536-7543.

[10]

    CAI Z P, YANG W Z, TANG W D, et al.. Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode ［J］. Mater. Sci. Semicond. Proc., 2013, 16(2):238-244.

[11] 蔡志鹏. 用于双微带阴极选通型分幅相机的改进型第三代像增强器研究 ［D］. 北京: 中国科学院大学, 2013.

    CAI Z P. Research on Improved Third Generation Image Intensifier for Dual Microstrip Cathode Gated Framing Camera ［D］. Beijing: University of Chinese Academy of Sciences, 2013. (in Chinese)

[12] GUO L H, LI J M, HOU X. Calculation of temporal response of field-assited transmission-mode GaAs NEA photocathodes ［J］. Solid State Electron., 1990, 33(4):435-439.

[13] ZHANG Y J, NIU J , ZOU J J, et al.. Variation of spectral response for exponential-doped transmission-mode GaAs photocathodes in the preparation process ［J］. Appl. Opt., 2010, 49(20):3935-3940.

[14] VERGARA G, HERRERA-G A, SPICER W E. Influence of the dopant concentration on the photoemission in NEA GaAs photocathodes ［J］. J. Appl. Phys., 1996, 80:1809-1815.

[15] TEREKHOV A S, ORLOV D A. Photoelectron thermalization near the unpinned surface of GaAs photocathodes ［J］. SPIE, 1991, 2550:157-164.

[16] 乔建良, 常本康, 牛军, 等. NEA GaN和GaAs光电阴极激活机理对比研究 ［J］. 真空科学与技术学报, 2009, 29(2):115-118.

    QIAO J L, CHANG B K, NIU J, et al.. Similarities and differences between negative electron affinity GaN and GaAs photocathode activation mechanisms ［J］. Chin. J. Vac. Sci. Technol., 2009, 29(2):115-118. (in Chinese)

[17] TIWARI S, WRITHT S L. Material properties of p-type GaAs at large dopings ［J］. Appl. Phys. Lett., 1990, 56(6):563-565.