中国激光, 2009, 36 (2): 328, 网络出版: 2009-02-23   

利用时域太赫兹波谱法的超高电场下砷化镓内能带耦合现象研究

Strong Band Mixing in Bulk GaAs under High Electric Field Investigated by Time-Domain Terahertz Spectroscopy
作者单位
1 上海理工大学光学与电子信息工程学院, 上海 200093
2 上海交通大学微电子学院, 上海 200240
引用该论文

朱亦鸣, 张大伟, 何波涌, 庄松林. 利用时域太赫兹波谱法的超高电场下砷化镓内能带耦合现象研究[J]. 中国激光, 2009, 36(2): 328.

Zhu Yiming, Zhang Dawei, He Boyong, Zhuang Songlin. Strong Band Mixing in Bulk GaAs under High Electric Field Investigated by Time-Domain Terahertz Spectroscopy[J]. Chinese Journal of Lasers, 2009, 36(2): 328.

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朱亦鸣, 张大伟, 何波涌, 庄松林. 利用时域太赫兹波谱法的超高电场下砷化镓内能带耦合现象研究[J]. 中国激光, 2009, 36(2): 328. Zhu Yiming, Zhang Dawei, He Boyong, Zhuang Songlin. Strong Band Mixing in Bulk GaAs under High Electric Field Investigated by Time-Domain Terahertz Spectroscopy[J]. Chinese Journal of Lasers, 2009, 36(2): 328.

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