808 nm InGaAsP－InP单量子阱激光器热特性研究
张永明, 钟景昌, 路国光, 秦莉, 赵英杰, 郝永芹, 姜晓光. 808 nm InGaAsP－InP单量子阱激光器热特性研究[J]. 光子学报, 2006, 35(1): 0009.
Zhang Yongming, Zhong Jingchang, Lu Guoguang, Qin Li, Zhao Yingjie, Hao yongqin, jiang xiaoguang. Study of Thermal Characteristics of 808 nm InGaAsP-InP SQW Lasers[J]. ACTA PHOTONICA SINICA, 2006, 35(1): 0009.
[1] Dias J,Elishevich I,Mobarban K,et al. InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodes grown by metal organic chemical vapor deposition. IEEE Photonics Technology Letters,1994,6(2): 132
[2] Dias J,Elishevich I,He X,et al. High-power InGaAsP/GaAs 0.8 μm laser diodes and peculiarities of operational characteristics. Appl Phys Lett,1994,65(8): 1004
[3] 吴翔，陆祖康，王攸．InGaAsP SBH激光器光束质量的非傍轴分析．光子学报，2003，32(11)：1308～1311
Wu X,Lu Z K,Wang Y. Acta Photonics Sinica,2003,32(11): 1308～1311
[4] 王志杰，陈博，王圩．LP-MOVPE生长的低阈值1．3 μm InGaAsP/InP压、张应变交替MQW激光器特性．光子学报1997，26(5)：418-421
Wang Z J,Chen B,Wang W. Acta Photonics Sinica,1997,26(5): 418-421
[5] Bernd Witzigmann,Mark S Hybertsen. A theoretical investigation of the characteristic temperature T0 for semiconductor laser. IEEE J on Selected Topics in Quantum Electronics,2003,9(3): 807～815
[6] Masahiko Kondow,Takeshi Kitatani,Kouji Nakahara,et al. Temperature dependence of lasing wavelength in a GaInNAs laser diode. IEEE Photonics Technology Letters,2000,12(7): 777～779
[7] Toshio Higashi,Tsuyoshi Yamamoto,Shouichi Ogita,et al. Experimental analysis of temperature dependence of oscillation wavelength in quantum-well FP semiconductor lasers. IEEE J Q E,1998,34(9): 1680～1688
张永明, 钟景昌, 路国光, 秦莉, 赵英杰, 郝永芹, 姜晓光. 808 nm InGaAsP－InP单量子阱激光器热特性研究[J]. 光子学报, 2006, 35(1): 0009. Zhang Yongming, Zhong Jingchang, Lu Guoguang, Qin Li, Zhao Yingjie, Hao yongqin, jiang xiaoguang. Study of Thermal Characteristics of 808 nm InGaAsP-InP SQW Lasers[J]. ACTA PHOTONICA SINICA, 2006, 35(1): 0009.
PDF全文
