由于GaN基紫外VCSEL中的空穴注入层p型掺杂效率较低，导致多量子阱中不能实现有效空穴注入，这极大地降低了紫外VCSEL的光电性能。本文设计了一种基于AlGaN的UV VCSEL中使用渐变HIL和EBL结构。该结构能够提高空穴注入效率，使空穴注入层中的空穴浓度增加，也能够使电子阻挡层和空穴注入层界面处的空穴势垒高度降低，从而利于空穴注入。使用商用软件PICS3D构建了该结构，并对能带结构以及载流子浓度等进行了模拟和理论分析。通过空穴注入层Al组分渐变引入极化掺杂增加空穴浓度从而提高空穴注入效率。在此基础上电子阻挡层渐变消除了空穴注入层和电子阻挡层界面的空穴突变势垒，使价带更平滑。这提高了多量子阱中的受激辐射复合速率，增强了激光功率。因此，渐变的p型层设计可以提升紫外VCSEL的光电性能。AI语音播报 

Owing to the low p-type doping efficiency in the hole injection layers (HILs) of GaN-based ultraviolet (UV) vertical-cavity surface-emitting laser (VCSEL), effective hole injection in multi-quantum wells (MQW) is not achieved, significantly limiting the photoelectric performance of UV VCSELs. We developed a slope-shaped HIL and an EBL structure in AlGaN-based UV VCSELs. In this study, by improving hole injection efficiency, the hole concentration in the HIL is increased, and the hole barrier at the electron barrier layer (EBL)/HIL interface is decreased. This minimises the hindering effect of hole injection. A mathematical model of this structure was established using a commercial software, photonic integrated circuit simulator in three-dimension (PICS3D). We conducted simulations and theoretical analyses of the band structure and carrier concentration. Introducing polarisation doping through the Al composition gradient in the HIL enhanced the hole concentration, thereby improving the hole injection efficiency. Furthermore, modifying the EBL eliminated the abrupt potential barrier for holes at the HIL/EBL interface, smoothing the valence band. This improved the stimulated radiative recombination rate in the MQW, increasing the laser power. Therefore, the sloped p-type layer can enhance the optoelectronic performance of UV VCSELs.