采用金属有机化学气相沉积（MOCVD）工艺在p-GaAs（100）衬底上外延了Ga₂O₃薄膜并制备了n-Ga₂O₃/p-GaAs异质结日盲紫外探测器。通过X射线衍射仪、原子力显微镜、场发射扫描电子显微镜等方法对Ga₂O₃薄膜表面形貌、晶体质量进行了测试与分析。结果表明，Ga₂O₃薄膜呈单一晶向，薄膜表面平整且为Volmer-Weber模式外延。测试表明，n-Ga₂O₃/p-GaAs异质结探测器具有明显的整流特性。器件在5 V反向偏压和紫外光（254 nm）照射下实现了超过3.0×10⁴的光暗电流比、7.0 A/W的响应度、3412%的外量子效率、4.6×10¹³ Jones的探测率。我们利用TCAD软件对器件结构进行仿真，得到了器件内的电场分布和能带结构，并分析了器件的工作原理。该异质结探测器性能较好，制造工艺简单，为Ga₂O₃超灵敏日盲紫外探测器的研制提供了新途径。

针对现有光纤无法满足宽带光密集波分复用系统传输和S+C+L波段粗波分复用的要求，设计了一种具有中心凹陷的三角形芯+环形的折射率剖面，利用外部气相沉积工艺制备了一种非零色散位移光纤，并通过调整第一芯层的相对折射率和第二芯层与第一芯层的半径比，探究了其对光纤衰减、色散斜率和有效面积等参数的影响。研究发现，当第一芯层的相对折射率逐渐增大且第二芯层与第一芯层半径比逐渐减小时，零色散波长和有效面积逐渐减小。当第一芯层的相对折射率在0.52%~0.53%，芯层半径比在2.6~2.7时，光纤的有效面积接近70 μm²，零色散波长在1 420 nm附近，在1 550 nm波段的色散系数大于8 ps·nm^-1·km^-1，色散斜率为0.059 ps·nm^-2·km^-1，可以较好地抑制传输过程中光非线性效应，满足长途干线网与城域网的使用要求。

Palladium (Pd)-based sulfides have triggered extensive interest due to their unique properties and potential applications in the fields of electronics and optoelectronics. However, the synthesis of large-scale uniform PdS and PdS₂ nanofilms (NFs) remains an enormous challenge. In this work, 2-inch wafer-scale PdS and PdS₂ NFs with excellent stability can be controllably prepared via chemical vapor deposition combined with electron beam evaporation technique. The thickness of the pre-deposited Pd film and the sulfurization temperature are critical for the precise synthesis of PdS and PdS₂ NFs. A corresponding growth mechanism has been proposed based on our experimental results and Gibbs free energy calculations. The electrical transport properties of PdS and PdS₂ NFs were explored by conductive atomic force microscopy. Our findings have achieved the controllable growth of PdS and PdS₂ NFs, which may provide a pathway to facilitate PdS and PdS₂ based applications for next-generation high performance optoelectronic devices.

Sharing the advantages of high optical power, high efficiency and design flexibility in a compact size, quantum cascade lasers (QCLs) are excellent mid-to-far infrared laser sources for gas sensing, infrared spectroscopic, medical diagnosis, and defense applications. Metalorganic chemical vapor deposition (MOCVD) is an important technology for growing high quality semiconductor materials, and has achieved great success in the semiconductor industry due to its advantages of high efficiency, short maintenance cycles, and high stability and repeatability. The utilization of MOCVD for the growth of QCL materials holds a significant meaning for promoting the large batch production and industrial application of QCL devices. This review summarizes the recent progress of QCLs grown by MOCVD. Material quality and the structure design together determine the device performance. Research progress on the performance improvement of MOCVD-grown QCLs based on the optimization of material quality and active region structure are mainly reviewed.