With ultrafast laser systems reaching presently 10 PW peak power or operating at high repetition rates, research towards ensuring the long-term, trouble-free performance of all laser-exposed optical components is critical. Our work is focused on providing insight into the optical material behavior at fluences below the standardized laser-induced damage threshold (LIDT) value by implementing a simultaneous dual analysis of surface emitted particles using a Langmuir probe (LP) and the target current (TC). ${\mathrm{HfO}}_2$ and ${\mathrm{ZrO}}_2$ thin films deposited on fused silica substrates by pulsed laser deposition at various ${\mathrm{O}}_2$ pressures for defect and stoichiometry control were irradiated by Gaussian, ultrashort laser pulses (800 nm, 10 Hz, 70 fs) in a wide range of fluences. Both TC and LP collected signals were in good agreement with the existing theoretical description of laser–matter interaction at an ultrashort time scale. Our approach for an in situ LIDT monitoring system provides measurable signals for below-threshold irradiation conditions that indicate the endurance limit of the optical surfaces in the single-shot energy scanning mode. The LIDT value extracted from the LP-TC system is in line with the multipulse statistical analysis done with ISO 21254-2:2011(E). The implementation of the LP and TC as on-shot diagnostic tools for optical components will have a significant impact on the reliability of next-generation ultrafast and high-power laser systems.

托卡马克装置预电离过程中，环向磁场应与电子回旋波频率相匹配，NCST装置现有的电子回旋波频率较低，为了让环向场与已有的电子回旋波频率匹配，提出新的环向场线圈电流产生方案，在原方案的磁场线圈平顶电流产生之前增加一个低电流台阶。回顾NCST球形托卡马克装置环向场线圈电源的原有方案后，设计了全控型和半控型两种方案，从电压电流的高次谐波、电流的可控性和纹波、改动成本和安装便捷性四方面对比两个方案的优缺点，最终选定半控型改造方案。根据现场条件制作电源改造柜，尽量减少对原有电源柜的改动。实际测试结果显示，两个电流台阶衔接正常，低电流台阶宽度可调、幅值可调，满足改造要求。

针对雷电间接效应多重脉冲组电流模拟需求，完成了雷电间接效应多重脉冲组模拟源的设计，采用20个Crowbar电路支路，通过分时放电的方式实现1个脉冲串内多脉冲输出需求，每个支路可以实现最小间隔30 ms的重复频率放电，从而实现3个脉冲串的输出需求。对放电支路的参数进行了详细设计，分析了电容、波尾电路电感、波尾电路电阻参数变化对输出特性的影响。分析了采用并联大电容实现放电电容重复频率快速充电的可行性，完成了装置的初步结构设计并结合装置结构简要分析了电路模拟参数设置的合理性。该装置建成后，可为电子、电气设备等开展测试提供技术支持。

纳秒脉冲电场消融要求在100 Ω负载上产生数千伏的纳秒脉冲，加快脉冲前沿有利于获得更窄的纳秒脉冲。提出了一种具有快速前沿的固态Marx发生器，在每级电路中插入一个电感，并且让放电管和充电管同时导通数十纳秒，等放电管完全开通后，关断充电管，对负载进行放电，以消除放电管和放电回路杂散电感对脉冲前沿的限制，获得具有快前沿的高压脉冲。搭建了32级Marx样机，实验中通过调节直通时间，在100 Ω的低阻负载上获得了电压上升沿35 ns、脉宽800 ns、电流186 A的高压脉冲。对比并分析了充电管和放电管直通时间对上升沿的影响，发现直通时间越长，脉冲电流的前沿越快。输出端的峰值电流最大可达186 A。表明该脉冲电压源可以有效地提高电流的输出，提高系统带载能力。该方案相比于传统的改进方法，提高了系统抗干扰能力的同时，也减少了所使用开关管的数量，降低了脉冲电源的成本。

提出了一种两级式可变母线电压的高压电容充电电源技术方案，该拓扑在半桥LLC谐振电路的基础上增加了一级图腾柱无桥功率因数校正（PFC）电路，通过改变母线电压来解决传统LLC谐振电源在输出更高电压时，工作频率变化范围过大带来的充电效率下滑的问题。由于图腾柱电路本身具备功率因数校正的功能，该电源设计还拥有能够直接从电网取电而不影响电网电能质量的优势。首先介绍了本电源设计中两部分的电路拓扑和工作原理，采用等效电阻法分析了电容负载下的电源输出特性。针对前级图腾柱电路设计了双环控制器以实现对母线电压和功率因数的控制，针对后级LLC电路提出了比例积分（PI）加低通滤波的恒流控制器以降低高频噪声带来的不利影响。最后通过模型构建与仿真分析，研究了高压电容充电电源3000 V/1 A时的充电特性，验证了本电源技术方案、设计和控制策略的可行性。

In this paper, we demonstrate nBn InAs/InAsSb type II superlattice (T2SL) photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared (MWIR) detection. To improve operating temperature and suppress dark current, a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO2 layer. These result in ultralow dark current density of 6.28×10-6A/cm2 and 0.31A/cm2 under -600mV at 97 K and 297 K, respectively, which is lower than most reported InAs/InAsSb-based MWIR photodetectors. Corresponding resistance area product values of 3.20×104Ω·cm2 and 1.32Ω·cm2 were obtained at 97 K and 297 K. A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5 µm and a peak detectivity of 2.1×109cm·Hz1/2/W were obtained at a high operating temperature up to 237 K.