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 Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_0.82Ga_0.18As buffer layer

WEI Qiu-lin GUO Zuo-xing ZHAO Lei ZHAO Liang YUAN De-zeng MIAO Guo-qing XIA Mao-sheng

[摘要]Microstructure and misfit dislocation behavior in InxGa1-xAs/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were analyzed by high resolution tra...

 PDF全文Optoelectronics Letters | 2016, 12(06):441

 TEM study of dislocations structure in In_0.82Ga_0.18As/In Pheterostructure with InGaAs as buffer layer

ZHAO Liang GUO Zuo-xing YUAN De-zeng WEI Qiu-lin ZHAO Lei

[摘要]In order to improve the quality of detector, InxGa1-xAs (x=0.82) buffer layer has been introduced in In0.82Ga0.18As/InP heterostructure. Dislocation behavior of the multilayer is analyzed through plan...

 PDF全文Optoelectronics Letters | 2016, 12(03):192