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[摘要]Microstructure and misfit dislocation behavior in InxGa1-xAs/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were analyzed by high resolution tra...
 PDF全文Optoelectronics Letters | 2016, 12(06):441
[摘要]In order to improve the quality of detector, InxGa1-xAs (x=0.82) buffer layer has been introduced in In0.82Ga0.18As/InP heterostructure. Dislocation behavior of the multilayer is analyzed through plan...
 PDF全文Optoelectronics Letters | 2016, 12(03):192
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