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 Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer

WEI Qiu-lin GUO Zuo-xing ZHAO Lei ZHAO Liang YUAN De-zeng MIAO Guo-qing XIA Mao-sheng

[摘要]Microstructure and misfit dislocation behavior in InxGa1-xAs/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were analyzed by high resolution tra...

 PDF全文Optoelectronics Letters | 2016, 12(06):441

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