Chinese Optics Letters, 2004, 2 (5): 05305, Published Online: Jun. 6, 2006
Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition Download: 804次
Abstract
Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different deposition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.
Dawei Zhang, Shuhai Fan, Weidong Gao, Hongbo He, Yingjian Wang, Jianda Shao, Zhengxiu Fan, Haojie Sun. Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition[J]. Chinese Optics Letters, 2004, 2(5): 05305.