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Passively Q-switched Self-frequency Doubling NYAB laser with GaAs Saturable Absorber

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Abstract

By using a passive Q-switch with GaAs saturable absorber, the Q-switched self-frequency doubling NYAB laser at 0.531μm has been successfully realized. The pulse width and the single pulse energy are measured. The numerical solutions of the coupling wave rate equations are in agreement with the experimental results.

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中图分类号:TN24

所属栏目:Laser Devices

基金项目:Supported by the Visiting Scholar Foundation of the Key Lab. in University, the Foundation for University Key Teacher by the Ministry of Education, the Research Fund for the Doctoral Program of High Education and the Scientific Technology Development Project Shandong Province.

收稿日期:2001-09-17

修改稿日期:2001-12-24

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ZHAO Shengzhi(赵圣之):State Key Laboratory of Crystal Materials, Jinan 250100, ChinaOptics Department, Shandong University, Jinan 250100, China
ZHENG Jiaan(郑加安):Optics Department, Shandong University, Jinan 250100, China
CHEN Lei(陈磊):Optics Department, Shandong University, Jinan 250100, China
CHENG Zhenxiang(程振祥):State Key Laboratory of Crystal Materials, Jinan 250100, China
CHEN Huanchu(陈焕矗):State Key Laboratory of Crystal Materials, Jinan 250100, China

备注:ZHAO Shengzhi was born in Yuncheng, Shandong Province, in 1957. He received the B.S.degree in laser in 1982 and M.S.degree in optics in 1986 in Shandong University and Institute of Physics, Chinese Academy of Sciences, respectively. He is a professor with the Optics Department, Shandong University. His research fields include laser, laser technology and nonlinear optics. He has published more than 100 research papers.

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【2】S.Z.Zhao, X.Y.Zhang, Q.P.Wang et al.. Passively Q-switched self-frequency doubling NdxY1-xAl3(BO3)4 laser with Cr4+:YAG saturable absorber. Opt. & Laser Technol., 1998, 30(4):239~242

【3】Y.Tsou, E.Garmire, W.Chen et al.. Passive Qswitching of Nd:YAG lasers by use of bulk semiconductors. Opt.Lett., 1993, 18(18):1514~1516

【4】T.T.Kajava, A.L.Gaeta. Q switching of a diode-pumped Nd:YAG laser with GaAs. Opt.Lett., 1996, 21(16):1244~1246

【5】B.Braum, F.X.Kartner, U.Keller et al.. Passively Q-switched 180-ps Nd:LaSc3(BO3)4 microchip laser. Opt.Lett., 1996, 21(6):405~407

【6】T.T.Kajava, A.L.Gaeta. Intra-cavity frequency-doubling of a Nd:YAG laser passively Q-switched with GaAs. Opt.Comm., 1997, 137(1-3):93~97

引用该论文

ZHAO Shengzhi(赵圣之),ZHENG Jiaan(郑加安),CHEN Lei(陈磊),CHENG Zhenxiang(程振祥),CHEN Huanchu(陈焕矗). Passively Q-switched Self-frequency Doubling NYAB laser with GaAs Saturable Absorber[J]. 中国激光(英文版), 2002, 11(6): 405-408

ZHAO Shengzhi(赵圣之),ZHENG Jiaan(郑加安),CHEN Lei(陈磊),CHENG Zhenxiang(程振祥),CHEN Huanchu(陈焕矗). Passively Q-switched Self-frequency Doubling NYAB laser with GaAs Saturable Absorber[J]. Chinese Journal of Lasers, 2002, 11(6): 405-408

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