Chinese Journal of Lasers B, 2002, 11 (2): 84, 网络出版: 2006-08-08  

Quasi-CW Diode Laser End-pumped Yb3+:GlassMicrochip Laser

Quasi-CW Diode Laser End-pumped Yb3+:GlassMicrochip Laser
作者单位
1 Shanghai Institute of Optics and Fine Mechanics, The Chinese Academyof Sciences,Shanghai 201800, China
2 Institute of Laser Engineering, Oska University,Osaka 565-0871, Japan
摘要
Abstract
Quasi-CW diode-pumped Yb3+:borate glass and Yb3+:phosphate glass microchip lasers have been reported. From Yb3+:phosphate glass laser, the maximum average output power was 31 mW and the optical-optical conversion efficiency was 5%. The maximum average output power was 18 mW, and optical-optical conversion efficiency was 3% for Yb3+:borate glass laser.

DAI Shixun, HU Lili, LIU Zhuping, HUANG Guosong, JIANG Zhonghong, YASUKAZU Izawa. Quasi-CW Diode Laser End-pumped Yb3+:GlassMicrochip Laser[J]. Chinese Journal of Lasers B, 2002, 11(2): 84. DAI Shixun, HU Lili, LIU Zhuping, HUANG Guosong, JIANG Zhonghong, YASUKAZU Izawa. Quasi-CW Diode Laser End-pumped Yb3+:GlassMicrochip Laser[J]. 中国激光(英文版), 2002, 11(2): 84.

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