Frontiers of Optoelectronics, 2012, 5 (2): 138, 网络出版: 2013-02-23  

Optical constants study of YAG:Ce phosphor layer blended with SiO2 particles by Mie theory for white light-emitting diode package

Optical constants study of YAG:Ce phosphor layer blended with SiO2 particles by Mie theory for white light-emitting diode package
作者单位
1 School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
2 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
3 School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
摘要
Abstract
Optical constants, including scattering coefficient, absorption coefficient, asymmetry parameter and reduced scattering coefficient, of cerium-doped yttrium aluminium garnets (YAG:Ce) phosphor blended with SiO2 particle for white light-emitting diode (LED) packages were calculated based on Mie theory in this study. Calculation processes were presented in detail. Variations of the optical constants with the changes of phosphor weight fraction, dopant weight fraction, phosphor particle radius and SiO2 particle radius, were shown and analyzed separately. It was found that the asymmetry parameter is the intrinsic characteristic of the particles, and the increase of the phosphor weight fraction (or concentration) will lead to the increase of the optical constants. It was also discovered that the increase of the dopant weight fraction will enhance the scattering coefficient, but result in the decreases of the reduced scattering coefficient and the absorption coefficient.

Run HU, Xiaobing LUO, Huai ZHENG, Sheng LIU. Optical constants study of YAG:Ce phosphor layer blended with SiO2 particles by Mie theory for white light-emitting diode package[J]. Frontiers of Optoelectronics, 2012, 5(2): 138. Run HU, Xiaobing LUO, Huai ZHENG, Sheng LIU. Optical constants study of YAG:Ce phosphor layer blended with SiO2 particles by Mie theory for white light-emitting diode package[J]. Frontiers of Optoelectronics, 2012, 5(2): 138.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!