Frontiers of Optoelectronics, 2008, 1 (3): 305, 网络出版: 2012-11-06  

SiC/Mg multilayer reflective mirror for He-II radiation at 30.4 nm and its thermal stability

SiC/Mg multilayer reflective mirror for He-II radiation at 30.4 nm and its thermal stability
作者单位
1 Institute of Precision Optical Engineering and Technology, Physics Department, Tongji University, Shanghai 200092, China
2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
摘要
Abstract
In applications of solar physics, extreme ultraviolet imaging of solar corona by selecting the He-II (l530.4 nm) emission line requires high reflectivity multilayer mirrors. Some material combinations were studied to design the mirrors working at a wavelength of 30.4 nm, including SiC/Mg, B4C/Mg, C/Mg, C/Al, Mo/Si, B4C/Si, SiC/Si, C/Si, and Sc/Si. Based on optimization of the largest reflectivity and the narrowest width for the multilayer mirror, a SiC/Mg material combination was selected as the mirror and fabricated by a magnetron sputtering system. The layer thicknesses of the SiC/Mg multilayer were measured by an X-ray diffractometer. Reflectivities were then measured on beamline U27 at the National Synchrotron Radiation Laboratory (NSRL) in Hefei, China. At a wavelength of 30.4 nm, the measured reflectivity is as high as 38.0%. Furthermore, a series of annealing experiments were performed to investigate the thermal stability of the SiC/Mg multilayer.

Jingtao ZHU, Da XU, Shumin ZHANG, Wenjuan WU, Zhong ZHANG, Fengli WANG, Bei WANG, Cunxia LI, Yao XU, Zhanshan WANG, Lingyan CHEN, Hongjun ZHOU, Tonglin HUO. SiC/Mg multilayer reflective mirror for He-II radiation at 30.4 nm and its thermal stability[J]. Frontiers of Optoelectronics, 2008, 1(3): 305. Jingtao ZHU, Da XU, Shumin ZHANG, Wenjuan WU, Zhong ZHANG, Fengli WANG, Bei WANG, Cunxia LI, Yao XU, Zhanshan WANG, Lingyan CHEN, Hongjun ZHOU, Tonglin HUO. SiC/Mg multilayer reflective mirror for He-II radiation at 30.4 nm and its thermal stability[J]. Frontiers of Optoelectronics, 2008, 1(3): 305.

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