Frontiers of Optoelectronics, 2013, 6 (4): 448, 网络出版: 2014-03-03
Lasing characteristics of curved semiconductor nanowires
Lasing characteristics of curved semiconductor nanowires
摘要
Abstract
The characteristics of curved semiconductor nanowire (NW) lasers were investigated. The red-shift in the laser spectra with increasing bending angles can be observed much more clearly than that in the photoluminescence (PL) spectra. Due to oscillation of light in resonant cavity, the bending loss of laser exhibits multiple times amplification of that of PL. Furthermore, an abnormal phenomenon of dominant peak switching is found in curved NWs when increasing the pump power, which has been first discovered and reported.
Weisong YANG, Yipei WANG, Yaoguang MA, Chao MENG, Xiaoqin WU, Qing YANG. Lasing characteristics of curved semiconductor nanowires[J]. Frontiers of Optoelectronics, 2013, 6(4): 448. Weisong YANG, Yipei WANG, Yaoguang MA, Chao MENG, Xiaoqin WU, Qing YANG. Lasing characteristics of curved semiconductor nanowires[J]. Frontiers of Optoelectronics, 2013, 6(4): 448.