在纯氧条件下，采用直流磁控溅射技术在单晶硅基片上沉积氧化铪(HfO2)薄膜，并研究了沉积过程中基片温度对薄膜结构和性能的影响规律。利用X射线衍射仪(XRD)和X射线能谱(XPS)表征了薄膜的晶体结构和组分，利用原子力显微镜(AFM)观察薄膜表面形貌，利用纳米力学测试系统表征了薄膜的纳米硬度和弹性模量。结果表明: 磁控溅射制备的HfO2薄膜样品呈(111)择优生长，其晶粒尺寸随着基片温度的升高而增大，但其晶型并不发生转变。随着基片温度的增加，基片中的硅元素向薄膜内扩散，影响了薄膜的化学计量比。沉积薄膜的表面形貌和力学性能亦受到其结构和组分变化的影响。在200 ℃条件下制备的HfO2薄膜纯度高，O、Hf元素化学计量达到了1.99，其表面质量和力学性能均达到了最佳值，随着基片温度升高至300 ℃以上，薄膜纯度下降，表面质量和力学性能均产生劣化。

HfO2 thin films were deposited on single crystalline silicon substrate by using magnetron sputtering in totally reactive oxygen plasma. Effect of substrate temperatures on the structure and properties of HfO2 films were investigated. Phase structure, component and surface topography were characterized by using the X-ray diffraction analysis (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively. The mechanical properties of the films were measured by using the nano-indentation. It is indicated that the (111)-oriented HfO2 films could be obtained and the structure of the as-deposited films was not changed as the increase of the substrate temperature. The stoichiometric ratio, surface topography and nano-mechanical properties of the as-deposited films were dependent on the substrate temperature. The stoichiometric ratio would be deteriorated with the substrate temperature increasing, which was attributed to the diffusion of silicon. The best substrate temperature was found to be 200 ℃. The atom ratio of O/Hf for the as-deposited films could arrive to be 1.99. In addition, the lowest value of root-mean-square(RMS) roughness and the maximum value of hardness and elastic modulus were obtained.