红外与毫米波学报, 2016, 35 (6): 662, 网络出版: 2017-01-12
含有超晶格电子势垒的In0.83Ga0.17As探测器暗电流仿真和验证
Dark current simulation and verification of In0.83Ga0.17As detector with superlattice electron barrier
In0.83Ga0.17As 探测器 超晶格电子势垒 暗电流 TCAD 仿真 In0.83Ga0.17As detector super lattice(SL) electronic barrier dark current TCAD simulation
摘要
为了获得 In0.83Ga0.17As 探测器的暗电流机制, 采用了 TCAD 软件对吸收层中含有和不含有超晶格电子势垒的p-i-n结构探测器暗电流特性进行仿真,并开展了器件验证.结果表明, 超晶格势垒可以调整器件的能带结构, 改变载流子传输特性, 降低SRH复合, 从而降低器件的暗电流, 仿真结果与实验结果吻合.在此基础上, 分析了势垒位 置和周期变化对暗电流的影响, 提出了进一步降低器件暗电流的超晶格电子势垒优化结构.
Abstract
To obtain the dark current mechanism of In0.83Ga0.17As detector, TCAD software was used to simulate its dark current property. The detectors include two structures with and without the super lattice (SL) electronic barrier in the InGaAs absorbed layer. At the same time, the detector has been fabricated to verify the simulation results. The results show that SL barrier can adjust the energy band structure and change the transport property of the carriers, and thus suppress the SRH recombination and decrease the dark current. Simulation results are in good agreement with experimental results. The influence of the location and periods of SL barrier on dark current was also simulated. The SL electronic barrier structure was optimized.
李庆法, 李雪, 唐恒敬, 邓双燕, 曹高奇, 邵秀梅, 龚海梅. 含有超晶格电子势垒的In0.83Ga0.17As探测器暗电流仿真和验证[J]. 红外与毫米波学报, 2016, 35(6): 662. LI Qing-Fa, LI Xue, TANG Heng-Jing, DENG Shuang-Yan, CAO Gao-Qi, SHAO Xiu-Mei, GONG Hai-Mei. Dark current simulation and verification of In0.83Ga0.17As detector with superlattice electron barrier[J]. Journal of Infrared and Millimeter Waves, 2016, 35(6): 662.