红外与毫米波学报, 2016, 35 (6): 672, 网络出版: 2017-01-12
大功率高效率2μm锑化镓基量子阱激光器
High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm
摘要
通过MBE外延系统生长了2 μm GaSb基AlGaAsSb/InGaSb I型量子阱激光器, 并制备了宽面条形波导激光器件, 在20℃工作温度下, 器件最大连续激射功率达到1.058 W, 当注入电流为0.5 A时, 峰值波长为1977μm, 最大能量转换效率为20.2%, 在脉冲频率为1 000 Hz, 占空比为5%的脉冲工作模式下, 最大激射功率为2.278 W.
Abstract
GaSb-based AlGaAsSb/InGaSb type-I quantum-wells (QW) 2 μm laser diodes (LDs) have been grown by MBE system. Stripe-type waveguide LDs with facets uncoated were fabricated and characterized. For single LD device, the maximum output power was 1.058 W under continuous wave (CW) operation at working temperature of 20℃. The maximum wall plug efficiency (WPE) was 20.2% and peak wavelength was 1.977 μm with injection current 0.5 A. The output power under pulse mode of 1000 Hz in 5% duty cycles was 2.278 W.
廖永平, 张宇, 杨成奥, 黄书山, 柴小力, 王国伟, 徐应强, 倪海桥, 牛智川. 大功率高效率2μm锑化镓基量子阱激光器[J]. 红外与毫米波学报, 2016, 35(6): 672. LIAO Yong-Ping, ZHANG Yu, YANG Cheng-Ao, HUANG Shu-Shan, CHAI Xiao-Li, WANG Guo-Wei, XU Ying-Qiang, NI Hai-Qiao, NIU Zhi-Chuan. High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm[J]. Journal of Infrared and Millimeter Waves, 2016, 35(6): 672.
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