Chinese Optics Letters, 2016, 14 (12): 121904, Published Online: Aug. 2, 2018  

Intersubband, interband transitions, and optical properties of two vertically coupled hemispherical quantum dots with wetting layers Download: 574次

Author Affiliations
1 Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran
2 Department of Physics, College of Sciences, Shiraz University, Shiraz 71946-84795, Iran
3 Department of Physics, Shiraz University of Technology, Shiraz 71555-313, Iran
Abstract
The electron and heavy hole energy levels of two vertically coupled InAs hemispherical quantum dots/wetting layers embedded in a GaAs barrier are calculated numerically. As the radius increases, the electronic energies increase for the small base radii and decrease for the larger ones. The energies decrease as the dot height increases. The intersubband and interband transitions of the system are also studied. For both, a spectral peak position shift to lower energies is seen due to the vertical coupling of dots. The interband transition energy decreases as the dot size increases, decreases for the dot shapes with larger heights, and reaches a minimum for coupled semisphere dots.

Masoomeh Dezhkam, Abdolnasser Zakery, Alireza Keshavarz. Intersubband, interband transitions, and optical properties of two vertically coupled hemispherical quantum dots with wetting layers[J]. Chinese Optics Letters, 2016, 14(12): 121904.

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