本文研究了重离子辐照前后SiO2/Si结构光学性质的变化。实验选择初始能量为414 MeV,不同辐照总剂量的Sn离子,在室温下辐照氧化层厚度为36 nm和90 nm的SiO2/Si结构。并在不同测试温度下获得了辐照前后SiO2/Si结构的光致发光谱(PL)谱。在相同的测试温度下,随着辐照总剂量的改变,峰位发生了移动,峰的强度也发生了改变; 在相同的辐照总剂量下,随着测试温度的改变,峰位发生移动。由于受束缚激子发光的影响,在测试温度为80 K时出现了一个新的光致发光峰。

In this work,the study of optical property of the SiO2/Si structures were performed before and after swift heavy ion radiation.The Sn ions with the energy of 414 MeV and different fluence were chosen to irradiate the SiO2/Si structure with oxide thickness of 36 nm and 90 nm at room temperature.The photoluminescence (PL) spectrum of the SiO2/Si structure were obtained at different test temperature.With the changing of the fluence,the PL peak moved and the intensity of the PL band changed at the same test temperature; at the same fluence,the PL peak moved with the changing of the test temperature.A new PL band were obtained at 80 K due to the light emission of bound exciton.