激光与光电子学进展, 2017, 54 (1): 011403, 网络出版: 2017-01-17   

Vague集在Cr12MoV钢激光淬火工艺优化中的应用

Application of Vague Set in Process Optimization of Laser Quenching of Cr12MoV Steels
作者单位
武汉理工大学机电工程学院, 湖北 武汉 430070
摘要
提出了正交试验和Vague集相结合的Cr12MoV工具钢工艺参数优化方法。以激光功率、扫描速度、搭接率、黑漆涂层厚度为优化工艺参数, 以淬火后材料表面硬度、淬层深度、淬层相对磨损量和腐蚀速度为综合工艺优化目标。首先进行了正交试验获得数据样本, 然后借助Vague集理论对数据进行分析处理实现对工艺参数的优化。先进行单工艺目标优化, 再通过单工艺目标权重求和进行综合工艺目标优化, 将多目标优化问题转化为单目标优化问题。优化结果为: 激光功率1400 kW、扫描速度15 mm/s、搭接率40%、涂层厚度60 μm。验证试验结果表明, 优化工艺参数使淬火层硬度提高了1.62%, 相对磨损量下降了9.84%, 腐蚀速度下降了9.26%, 淬层深度仅减小1.33%。
Abstract
An optimization method of laser quenching process parameters of Cr12MoV die steel is proposed based on the orthogonal experiment and Vague set. The laser power, scanning speed, overlap rate, black paint thickness are taken as optimizing process parameters, while the quenching layer surface hardness after quenching, quenching layer depth, relative wear rate and corrosion rate of quenching layer are taken as integrated process optimization objectives. Orthogonal experiment is first carried out to obtain the data samples, and then the data are analyzed and processed by the Vague set theory to realize the optimization of process parameters. The optimization of single process is first carried out, and then comprehensive process optimization is taken through single process objective weight sum, where the multi-objective optimization problem is transformed into a single objective optimization problem. The optimization results are listed as laser power of 1400 kW, scanning speed of 15 mm/s, lap ratio of 40%, and coating thickness of 60 μm. Test experimental results indicate that the optimization of process parameters make the hardness of quenching layer increase by 1.62%, the relative abrasion value decrease by 9.84%, the corrosion rate decrease by 9.26%, and the quenching layer depth only decrease by 1.33%.

舒服华. Vague集在Cr12MoV钢激光淬火工艺优化中的应用[J]. 激光与光电子学进展, 2017, 54(1): 011403. Shu Fuhua. Application of Vague Set in Process Optimization of Laser Quenching of Cr12MoV Steels[J]. Laser & Optoelectronics Progress, 2017, 54(1): 011403.

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