介绍互补金属氧化物半导体(CMOS)集成电路的发展历程及纳米级 CMOS集成电路的关键技术, 在此基础上研究了纳米级 CMOS集成电路的辐射效应及辐射加固现状。研究结果表明, 纳米级 FDSOICMOS集成电路无需特殊的加固措施, 却比相同技术代的体硅 CMOS集成电路有好得多的辐射加固能力, 特别适用于空间应用环境。

The development of Complementary Metal Oxide Semiconductor(CMOS) integrated circuit and the key technologies of nanometer scale CMOS integrated circuit are introduced. Based on this, the radiation effects and the current status of radiation hardening for nano scale CMOS integrated circuit are studied. The research shows that the nano scale FDSOICMOS integrated circuit bears a better radiation hardening ability than the same technology generation of bulk silicon CMOS integrated circuit, and it is especially suitable for the application of space technology.及电路的设计和制造，半导体器件及电路的辐射效应和加固技术。我国第1 只MOSFET 及JFET 的研究骨干，国际注氮隔离SOICMOS 的发明者，著有专著4 本、译著3 本，已发表论文160 余篇。负责的研究课题2 次获中科院科技进步二等奖，1 次获国防光华科技进步个人二等奖.