为研究一种有效提高MOCVD反应室温度均匀性的方法，针对自主研发的大型立式MOCVD反应室，建立二维模型，就激励电流对反应室温度均匀性的影响进行了分析。为提高温度均匀性，通过改变不同电参数来观察磁场及石墨盘表面径向温度的变化，发现电参数与加热效率成正比，但是与加热的均匀性成反比关系；在相同功率下，电流频率上升将导致温度均匀性下降。以上关系中反映出的合理的电参数，在保证反应温度的同时，保证了温度均匀性，有利于薄膜生长。

In order to improve the temperature uniform in the reaction chamber of MOCVD, the two-dimensional model was established based on the vertical MOCVD reaction chamber researched by ourselves. Using the finite element method, the incentive effect of current on the reaction chamber temperature uniformity was analyzed. For purpose to improve the temperature uniformity, the change of magnetic field and graphite disk surface radial temperature were observed by changing the current intensity and frequency. It is found that the electrical parameter is proportional to the heating efficiency but inversely proportional to heating uniformity, Under the same power, the temperature uniformity decreases with the increasing of the current frequency. Reasonable electrical parameters which reflect from above, ensure both reaction temperature and temperature uniformity, is conducive to the quality of thin film growth..