Chinese Optics Letters, 2017, 15 (4): 041401, Published Online: Jul. 25, 2018  

Picosecond pulse generation in a mono-layer MoS2 mode-locked Ytterbium-doped thin disk laser

Author Affiliations
1 School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
2 State Key Laboratory of High Field Laser Physics, Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
3 University of Chinese Academy of Sciences, Beijing 100049, China
Abstract
A mode-locked (ML) picosecond ytterbium-doped thin disk laser using a monolayer MoS2 as the saturable absorber (SA) is demonstrated. The monolayer MoS2 is fabricated through the method of low-pressure chemical vapor deposition. The laser directly produces stable ML picosecond pulses at a slope efficiency of 9.71%. The maximum output power is approximately 890 mW, while the corresponding repetition, pulse energy, and pulse duration are 48.6 MHz, 18.3 nJ, and 13.1 ps, respectively. Results suggest that the monolayer MoS2 is a promising SA for ultrafast lasers system.

Jun Lu, Xiao Zou, Chun Li, Wenkai Li, Zhengzheng Liu, Yanqi Liu, Yuxin Leng. Picosecond pulse generation in a mono-layer MoS2 mode-locked Ytterbium-doped thin disk laser[J]. Chinese Optics Letters, 2017, 15(4): 041401.

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