Chinese Optics Letters, 2017, 15 (4): 042501, Published Online: Jul. 25, 2018
Low-loss high-extinction-ratio single-drive push-pull silicon Michelson interferometric modulator Download: 917次
Abstract
We demonstrate a high-speed silicon carrier-depletion Michelson interferometric (MI) modulator with a low on-chip insertion loss of 3 dB. The modulator features a compact size of < 1 mm 2 and a static high extinction ratio of > 30 dB . The V π · L π of the MI modulator is 0.95 – 1.26 V · cm under a reverse bias of 1 to 8 V , indicating a high modulation efficiency. Experimental results show that a 4-level pulse amplitude modulation up to 20 Gbaud is achieved with a bit error rate of 6 × 10 3 , and a 30 Gb/s binary phase-shift-keying modulation is realized with an error vector magnitude of 25.8%.
Minjuan Wang, Linjie Zhou, Haike Zhu, Yanyang Zhou, Yiming Zhong, Jianping Chen. Low-loss high-extinction-ratio single-drive push-pull silicon Michelson interferometric modulator[J]. Chinese Optics Letters, 2017, 15(4): 042501.