中国激光, 2017, 44 (3): 0303004, 网络出版: 2017-03-08   

碳污染清洗工艺对极紫外光刻光学元件反射率的影响

Impact of Carbon Contamination Cleaning Technologies on Reflectivity of Extreme Ultraviolet Lithography Optics
作者单位
1 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室, 吉林 长春130033
2 中国科学院大学, 北京 100049
摘要
极紫外光刻系统中的碳污染会降低多层膜反射率,在保证光学元件性能的前提下,如何选择碳清洗工艺是一项重要课题。通过对不同清洗工艺的原理分析,揭示了不同工艺对多层膜反射率的影响主要体现在膜层氧化、刻蚀及表面粗糙度劣化等方面。基于时域有限差分方法及总积分散射理论,研究了不同影响因素与多层膜反射率的关系。结果表明,膜层氧化及表面粗糙度劣化是导致多层膜反射率下降的主要因素,而刻蚀的影响相对较小。基于以上分析结果,射频氢等离子体及原子氢清洗技术,在去除光学元件表面沉积碳的同时,不会显著降低光学元件性能,可优先考虑采用。
Abstract
The carbon contamination of extreme ultraviolet lithography system will degrade the reflectivity of multilayer. On the premise of guaranteeing the performances of optics,how to choose the carbon cleaning process is an important project. By analyzing the principle of various cleaning methods process theory, it is revealed that the influences of different technologies on the reflectivity of multilayer mainly are film oxidation, etching and surface roughness degradation. On the base of finite difference time domain and total integrated scattering theory, the relation between various influence factors and reflectivity of multilayer is studied. Results show that film oxidation and surface roughness degradation are main factors that result in decrease of the reflectivity of multilayer, while the influence for etching is minor. Based on the above analysis results, both radio frequency hydrogen plasma and atomic hydrogen cleaning technologies will not reduce the performances of optics and can be adopted as prior options, while the carbon contamination at the surface of optics is removed.

王依, 卢启鹏, 高云国. 碳污染清洗工艺对极紫外光刻光学元件反射率的影响[J]. 中国激光, 2017, 44(3): 0303004. Wang Yi, Lu Qipeng, Gao Yunguo. Impact of Carbon Contamination Cleaning Technologies on Reflectivity of Extreme Ultraviolet Lithography Optics[J]. Chinese Journal of Lasers, 2017, 44(3): 0303004.

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