硅量子点(Si QDs)的尺寸一般小于10 nm，由于量子限域效应和表面效应而表现出与体硅材料不同的电子和光学性质，因此硅量子点受到了研究者的关注。近年来，硅量子点因其新颖的光电性能已经被应用到光电器件领域，并取得了一系列的研究进展。概述了硅量子点的电子和光学性质，详细介绍了国内外有关硅量子点在发光器件、太阳电池和光探测器3个方面的研究进展，并针对不同类型的硅量子点光电器件的性能进行了分析，认为经过坚持不懈的研究，硅量子点能够在未来光电器件革新中扮演重要角色。

Silicon quantum dots (Si QDs) are usually smaller than 10 nm. They have drawn much attention from researchers because of their novel electronic and optical properties caused by quantum confinement effect and surface effect, which are different from those of bulk silicon materials. In recent years, Si QDs have been applied in the field of optoelectronics because of their novel electronic and optical properties, and a series of research progress have been achieved. The electronic and optical properties of Si QDs are overviewed. The use of Si QDs in optoelectronic devices such as light-emitting diodes, solar cells and photodetectors is introduced in detail. The performance of different types of Si QDs in optoelectronic devices is analyzed as well. It is believed that if continuous efforts in the research on Si QDs are made, Si QDs will play a crucial role in the innovation of optoelectronic devices in the future.