介绍了一种抗辐射加固型低压差线性稳压器(LDO)的电路设计，内部集成了精密基准源、误差放大器、输出调整管和上电复位时间控制等模块电路。重点介绍了采用总剂量、中子效应的器件参数变化预估方法进行仿真验证。芯片采用0.6 μm BiCMOS 工艺制造，测试验证结果表明，产品在满足使用要求的同时，具备抗电离总剂量3×103 Gy(Si)、抗中子注量0.6×1014 n·cm-2的性能，适用于核辐射环境。辐射测试结果证明了设计的正确性。

A design of radiation hardening Low Dropout Regulators(LDO) is presented, which consists of high precision reference，error amplifier，power transistor and power reset time controlling circuit，and so on. The estimation method of the device parameters variation is introduced in detail in total ionizing dose and neutron radiation experiment by simulation. The chip is fabricated in 0.6 μm BiCMOS technology. The results indicate that the product not only meets application requirements but also performs well in radiation hardening when the total ionizing dose attains to 3×103 Gy(Si) and neutron fluence attains to 0.6×1014 n·cm-2. It is applicable to nuclear radiation environment and the test results prove the correctness of the design.