光学 精密工程, 2017, 25 (3): 663, 网络出版: 2017-04-18   

静电场辅助的微压印光刻技术

Electrostatic field assisted micro imprint lithography technology
作者单位
1 中国科学院 长春光学精密机械与物理研究所, 吉林 长春 130033
2 中国科学院大学, 北京 100049
3 中国人民解放军63861 部队, 吉林 白城 137001
4 中国科学院 西安光学精密机械研究所, 陕西 西安 710119
摘要
介绍了一种静电场辅助的新型微压印光刻技术, 并对其工艺过程进行了深入的理论研究。首先, 采用数值仿真软件COMSOLTM Multiphysics, 建立了静电场辅助的压印光刻瞬态仿真分析模型, 讨论了不同时域微结构的演化过程。然后, 详细分析了微结构的成型与仿真实验参数的定性关系, 发现: 适当地减小极板间距、模板凸起结构周期, 同时增加模板的凸起高度、初始聚合物薄膜厚度和电压有助于微纳结构的成型。最后, 通过仿真实验参数优化, 得到了带有31 μm中空结构的球冠微结构。与传统压印方法相比, 静电场辅助的微压印技术工艺过程简单且成本较低, 能够广泛应用于微电子机械系统、光子学、遗传学和组织系统等。
Abstract
In this paper, a new type of micro imprint lithography assisted by electrostatic field was introduced, and an in-depth theoretical research was conducted on its technological process. First, numerical simulation software (COMSOLTM Multiphysics) was adopted to establish a transient simulation model for electrostatic filed assisted imprint lithography and discussed the evolution process of micro structure in different time domains. Then a detailed analysis was conducted on the qualitative relationship between the micro structure formation and simulation experiment parameters, during which it was found that properly reducing the polar plate spacing, template bulging period and increasing the bulging height, initial polymer film thickness and voltage were beneficial to formation of the micro-nano structure. Finally, a spherical cap micro structure with 31 μm hollow structure was obtained through optimization of the simulation experiment parameters. Compared with traditional imprint method, the electrostatic field assisted micro imprint, which is characterized by simple process and lower cost, can be widely applied to the micro electronic and mechanical system, photonics, genetics and tissue system etc.

刘民哲, 王泰升, 李和福, 刘震宇, 陈佐龙, 鱼卫星. 静电场辅助的微压印光刻技术[J]. 光学 精密工程, 2017, 25(3): 663. LIU Min-zhe, WANG Tai-sheng, LI He-fu, LIU Zhen-yu, CHEN Zuo-long, YU Wei-xing. Electrostatic field assisted micro imprint lithography technology[J]. Optics and Precision Engineering, 2017, 25(3): 663.

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