半导体光电, 2017, 38 (2): 194, 网络出版: 2017-05-09
Y波导调制器残余强度调制的测量
Measurement of Residual Intensity Modulation of Y Waveguide Modulator
摘要
为了便于分析Y波导调制器残余强度调制的产生机理,提出一种Y波导调制器残余强度调制的测试方法。系统采用Spartan6系列的FPGA作为主控芯片,控制模数转换芯片ADS5560对经光电转换后的调制光信号进行采集,将采集到的数据打包后通过UART通信模式发送至PC机,获取Y波导调制器残余强度调制大小及波形信息。根据残余强度调制大小和波形信息分析模场改变引起的线性和杂散光与输出光的干涉两种机理产生的残余强度调制所占比例。测试结果表明,系统稳定性良好,对于Y波导调制器的开发有重要意义。
Abstract
To facilitate the analysis of mechanism of the residual intensity modulation of Y waveguide modulator and improve the measurement speed, a method for testing the residual intensity modulation of Y waveguide modulator was put forward. The system uses Spartan6 series FPGA as the master control chip, to control analogtodigital conversion chip ADS5560 to collect optical modulation signals after the photoelectric conversion, sending the collected data package to PC through UART communication mode, gaining the size of the residual intensity modulation and waveform information of Y waveguide modulator. According to the size of residual intensity modulation and waveform information, the linear output caused by mode field change was analyzed and interference output caused by stray light and the light interference mechanism was also analyzed. The experiments show that the system stability is good, having important significance for the development of Y waveguide modulator.
赵艳, 杨德伟, 郑月, 翁苍杰, 姚天龙. Y波导调制器残余强度调制的测量[J]. 半导体光电, 2017, 38(2): 194. ZHAO Yan, YANG Dewei, ZHENG Yue, WENG Cangjie, YAO Tianlong. Measurement of Residual Intensity Modulation of Y Waveguide Modulator[J]. Semiconductor Optoelectronics, 2017, 38(2): 194.