本文提出以苯并环丁烯(benzocyclobutene,BCB)或硅为介质层材料,用碳纳米管(Carbon Nanotube,CNT) 填充的屏蔽型硅通孔(Shielded Through-Silicon Vias,S-TSV)结构,利用等效传输线模型计算了其正向传输系数和衰减常数,分析了量子电容(Quantum Capacitance,Cq)对S-TSV传输性能的影响。研究发现,Cq能改善以BCB为介质层,填充多壁碳纳米管束(Multi-walled carbon nanotube bundle,MWCNTB)的S-TSV高于20 GHz频段的传输性能。此外,Cq可以明显提升以硅为介质层的S-TSV的传输性能,且Cq的温度效应能与硅电导的温度效应平衡,从而提高S-TSV的热稳定性。

Shielded through-silicon vias (S-TSV) filled with carbon nanotubes (CNT) in the via and the shielded layer,and benzocyclobutene or silicon in the insulation layer was presented in this paper. Then,the equivalent transmission line models of the S-TSVs were constructed. Based on the model,the forward transmission coefficient and attenuation constant had been calculated before the impact of quantum capacitance (Cq) of CNT on the transmission performance of S-TSVs was analyzed. The results show that the transmission performance above 20 GHz of S-TSV filled with BCB and MWCNT bundle can be significantly improved by Cq. Also,the performance of S-TSVs with silicon insulation layer can be improved by Cq. Besides,Cq can balance the temperature effect of silicon so that the heat stability of S-TSV with silicon insulation layer is improved.